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Identification of Exciton Complexes in Charge-Tunable Janus W(Se)(S) Monolayers

[Image: see text] Janus transition-metal dichalcogenide monolayers are artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving d...

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Detalles Bibliográficos
Autores principales: Feuer, Matthew S. G., Montblanch, Alejandro R.-P., Sayyad, Mohammed Y., Purser, Carola M., Qin, Ying, Alexeev, Evgeny M., Cadore, Alisson R., Rosa, Barbara L. T., Kerfoot, James, Mostaani, Elaheh, Kalȩba, Radosław, Kolari, Pranvera, Kopaczek, Jan, Watanabe, Kenji, Taniguchi, Takashi, Ferrari, Andrea C., Kara, Dhiren M., Tongay, Sefaattin, Atatüre, Mete
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10134503/
https://www.ncbi.nlm.nih.gov/pubmed/37058341
http://dx.doi.org/10.1021/acsnano.2c10697
Descripción
Sumario:[Image: see text] Janus transition-metal dichalcogenide monolayers are artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving direct-bandgap optical transitions in a uniform potential landscape. Previous Janus studies had broad photoluminescence (>18 meV) spectra obfuscating their specific excitonic origin. Here, we identify the neutral and the negatively charged inter- and intravalley exciton transitions in Janus W(Se)(S) monolayers with ∼6 meV optical line widths. We integrate Janus monolayers into vertical heterostructures, allowing doping control. Magneto-optic measurements indicate that monolayer W(Se)(S) has a direct bandgap at the K points. Our results pave the way for applications such as nanoscale sensing, which relies on resolving excitonic energy shifts, and the development of Janus-based optoelectronic devices, which requires charge-state control and integration into vertical heterostructures.