Machine-learning-assisted rational design of 2D doped tellurene for fin field-effect transistor devices

Fin field-effect transistors (FinFETs) have been widely used in electronic devices on account of their excellent performance, but this new type of device is facing many challenges because of size constraints. Two-dimensional (2D) materials with a layer structure can meet the required thickness of Fi...

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Detalles Bibliográficos
Autores principales: Chen, An, Ye, Simin, Wang, Zhilong, Han, Yanqiang, Cai, Junfei, Li, Jinjin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10140614/
https://www.ncbi.nlm.nih.gov/pubmed/37123447
http://dx.doi.org/10.1016/j.patter.2023.100722

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10140614/
https://www.ncbi.nlm.nih.gov/pubmed/37123447
http://dx.doi.org/10.1016/j.patter.2023.100722

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