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A Novel Low-Power and Soft Error Recovery 10T SRAM Cell
In SRAM cells, as the size of transistors and the distance between transistors decrease rapidly, the critical charge of the sensitive node decreases, making SRAM cells more susceptible to soft errors. If radiation particles hit the sensitive nodes of a standard 6T SRAM cell, the data stored in the c...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10140821/ https://www.ncbi.nlm.nih.gov/pubmed/37421077 http://dx.doi.org/10.3390/mi14040845 |
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author | Liu, Changjun Liu, Hongxia Yang, Jianye |
author_facet | Liu, Changjun Liu, Hongxia Yang, Jianye |
author_sort | Liu, Changjun |
collection | PubMed |
description | In SRAM cells, as the size of transistors and the distance between transistors decrease rapidly, the critical charge of the sensitive node decreases, making SRAM cells more susceptible to soft errors. If radiation particles hit the sensitive nodes of a standard 6T SRAM cell, the data stored in the cell are flipped, resulting in a single event upset. Therefore, this paper proposes a low-power SRAM cell, called PP10T, for soft error recovery. To verify the performance of PP10T, the proposed cell is simulated by the 22 nm FDSOI process, and compared with the standard 6T cell and several 10T SRAM cells, such as Quatro-10T, PS10T, NS10T, and RHBD10T. The simulation results show that all of the sensitive nodes of PP10T can recover their data, even when S0 and S1 nodes flip at the same time. PP10T is also immune to read interference, because the change of the ‘0’ storage node, directly accessed by the bit line during the read operation, does not affect other nodes. In addition, PP10T consumes very low-holding power due to the smaller leakage current of the circuit. |
format | Online Article Text |
id | pubmed-10140821 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-101408212023-04-29 A Novel Low-Power and Soft Error Recovery 10T SRAM Cell Liu, Changjun Liu, Hongxia Yang, Jianye Micromachines (Basel) Article In SRAM cells, as the size of transistors and the distance between transistors decrease rapidly, the critical charge of the sensitive node decreases, making SRAM cells more susceptible to soft errors. If radiation particles hit the sensitive nodes of a standard 6T SRAM cell, the data stored in the cell are flipped, resulting in a single event upset. Therefore, this paper proposes a low-power SRAM cell, called PP10T, for soft error recovery. To verify the performance of PP10T, the proposed cell is simulated by the 22 nm FDSOI process, and compared with the standard 6T cell and several 10T SRAM cells, such as Quatro-10T, PS10T, NS10T, and RHBD10T. The simulation results show that all of the sensitive nodes of PP10T can recover their data, even when S0 and S1 nodes flip at the same time. PP10T is also immune to read interference, because the change of the ‘0’ storage node, directly accessed by the bit line during the read operation, does not affect other nodes. In addition, PP10T consumes very low-holding power due to the smaller leakage current of the circuit. MDPI 2023-04-13 /pmc/articles/PMC10140821/ /pubmed/37421077 http://dx.doi.org/10.3390/mi14040845 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Liu, Changjun Liu, Hongxia Yang, Jianye A Novel Low-Power and Soft Error Recovery 10T SRAM Cell |
title | A Novel Low-Power and Soft Error Recovery 10T SRAM Cell |
title_full | A Novel Low-Power and Soft Error Recovery 10T SRAM Cell |
title_fullStr | A Novel Low-Power and Soft Error Recovery 10T SRAM Cell |
title_full_unstemmed | A Novel Low-Power and Soft Error Recovery 10T SRAM Cell |
title_short | A Novel Low-Power and Soft Error Recovery 10T SRAM Cell |
title_sort | novel low-power and soft error recovery 10t sram cell |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10140821/ https://www.ncbi.nlm.nih.gov/pubmed/37421077 http://dx.doi.org/10.3390/mi14040845 |
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