Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer

In this paper, the transient breakdown voltage (TrBV) of a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor (LDMOS) device was increased by introducing a step P-type doping buried layer (SPBL) below the buried oxide (BOX). Device simulation software MEDICI 0.13.2 was used to i...

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Detalles Bibliográficos
Autores principales: Yang, Xiaoming, Cao, Taiqiang, Zhang, Xiaohua, Li, Tianqian, Luo, Hang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10140969/
https://www.ncbi.nlm.nih.gov/pubmed/37421120
http://dx.doi.org/10.3390/mi14040887

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