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Review on Resistive Switching Devices Based on Multiferroic BiFeO(3)

This review provides a comprehensive examination of the state-of-the-art research on resistive switching (RS) in BiFeO(3) (BFO)-based memristive devices. By exploring possible fabrication techniques for preparing the functional BFO layers in memristive devices, the constructed lattice systems and co...

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Detalles Bibliográficos
Autores principales: Zhao, Xianyue, Menzel, Stephan, Polian, Ilia, Schmidt, Heidemarie, Du, Nan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10142330/
https://www.ncbi.nlm.nih.gov/pubmed/37110910
http://dx.doi.org/10.3390/nano13081325
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author Zhao, Xianyue
Menzel, Stephan
Polian, Ilia
Schmidt, Heidemarie
Du, Nan
author_facet Zhao, Xianyue
Menzel, Stephan
Polian, Ilia
Schmidt, Heidemarie
Du, Nan
author_sort Zhao, Xianyue
collection PubMed
description This review provides a comprehensive examination of the state-of-the-art research on resistive switching (RS) in BiFeO(3) (BFO)-based memristive devices. By exploring possible fabrication techniques for preparing the functional BFO layers in memristive devices, the constructed lattice systems and corresponding crystal types responsible for RS behaviors in BFO-based memristive devices are analyzed. The physical mechanisms underlying RS in BFO-based memristive devices, i.e., ferroelectricity and valence change memory, are thoroughly reviewed, and the impact of various effects such as the doping effect, especially in the BFO layer, is evaluated. Finally, this review provides the applications of BFO devices and discusses the valid criteria for evaluating the energy consumption in RS and potential optimization techniques for memristive devices.
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spelling pubmed-101423302023-04-29 Review on Resistive Switching Devices Based on Multiferroic BiFeO(3) Zhao, Xianyue Menzel, Stephan Polian, Ilia Schmidt, Heidemarie Du, Nan Nanomaterials (Basel) Review This review provides a comprehensive examination of the state-of-the-art research on resistive switching (RS) in BiFeO(3) (BFO)-based memristive devices. By exploring possible fabrication techniques for preparing the functional BFO layers in memristive devices, the constructed lattice systems and corresponding crystal types responsible for RS behaviors in BFO-based memristive devices are analyzed. The physical mechanisms underlying RS in BFO-based memristive devices, i.e., ferroelectricity and valence change memory, are thoroughly reviewed, and the impact of various effects such as the doping effect, especially in the BFO layer, is evaluated. Finally, this review provides the applications of BFO devices and discusses the valid criteria for evaluating the energy consumption in RS and potential optimization techniques for memristive devices. MDPI 2023-04-10 /pmc/articles/PMC10142330/ /pubmed/37110910 http://dx.doi.org/10.3390/nano13081325 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Zhao, Xianyue
Menzel, Stephan
Polian, Ilia
Schmidt, Heidemarie
Du, Nan
Review on Resistive Switching Devices Based on Multiferroic BiFeO(3)
title Review on Resistive Switching Devices Based on Multiferroic BiFeO(3)
title_full Review on Resistive Switching Devices Based on Multiferroic BiFeO(3)
title_fullStr Review on Resistive Switching Devices Based on Multiferroic BiFeO(3)
title_full_unstemmed Review on Resistive Switching Devices Based on Multiferroic BiFeO(3)
title_short Review on Resistive Switching Devices Based on Multiferroic BiFeO(3)
title_sort review on resistive switching devices based on multiferroic bifeo(3)
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10142330/
https://www.ncbi.nlm.nih.gov/pubmed/37110910
http://dx.doi.org/10.3390/nano13081325
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