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Review on Resistive Switching Devices Based on Multiferroic BiFeO(3)

This review provides a comprehensive examination of the state-of-the-art research on resistive switching (RS) in BiFeO(3) (BFO)-based memristive devices. By exploring possible fabrication techniques for preparing the functional BFO layers in memristive devices, the constructed lattice systems and co...

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Detalles Bibliográficos
Autores principales: Zhao, Xianyue, Menzel, Stephan, Polian, Ilia, Schmidt, Heidemarie, Du, Nan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10142330/
https://www.ncbi.nlm.nih.gov/pubmed/37110910
http://dx.doi.org/10.3390/nano13081325