Cargando…
Synaptic plasticity and learning behaviour in multilevel memristive devices
This research explores a novel two-terminal heterostructure of the Pt/Cu(2)Se/Sb(2)Se(3)/FTO memristor, which exhibited essential biological synaptic functions. These synaptic functions play a critical role in emulating biological neural systems and overcoming the limitations of traditional computin...
Autores principales: | , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10142452/ https://www.ncbi.nlm.nih.gov/pubmed/37124007 http://dx.doi.org/10.1039/d3ra02075d |
Sumario: | This research explores a novel two-terminal heterostructure of the Pt/Cu(2)Se/Sb(2)Se(3)/FTO memristor, which exhibited essential biological synaptic functions. These synaptic functions play a critical role in emulating biological neural systems and overcoming the limitations of traditional computing architectures. By repeating a fixed pulse train, in this study, we realized a few crucial neural functions toward weight modulation, such as nonlinear conductance changes and potentiation/depression characteristics, which aid the transition of short-term memory to long-term memory. However, we also employed multilevel switching, which provides easily accessible multilevel (4-states, 2-bit) states, for high-density data storage capability along with endurance (10(2) pulse cycles for each state) in our proposed device. In terms of synaptic plasticity, the device performed well by controlling the pulse voltage and pulse width during excitatory post-synaptic current (EPSC) measurements. The spike-time-dependent plasticity (STDP) highlights their outstanding functional properties, indicating that the device can be used in artificial biological synapse applications. The artificial neural network with Pt/Cu(2)Se/Sb(2)Se(3)/FTO achieved a significant accuracy of 73% in the simulated Modified National Institute of Standards and Technology database (MNIST) pattern. The conduction mechanism of resistive switching and the artificial synaptic phenomena could be attributed to the transfer of Se(2−) ions and selenium vacancies. The neuromorphic characteristics of the Pt/Cu(2)Se/Sb(2)Se(3)/FTO devices demonstrate their potential as futuristic synaptic devices. |
---|