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Synaptic plasticity and learning behaviour in multilevel memristive devices

This research explores a novel two-terminal heterostructure of the Pt/Cu(2)Se/Sb(2)Se(3)/FTO memristor, which exhibited essential biological synaptic functions. These synaptic functions play a critical role in emulating biological neural systems and overcoming the limitations of traditional computin...

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Autores principales: Asif, M., Singh, Yogesh, Thakre, Atul, Singh, V. N., Kumar, Ashok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10142452/
https://www.ncbi.nlm.nih.gov/pubmed/37124007
http://dx.doi.org/10.1039/d3ra02075d
_version_ 1785033617305501696
author Asif, M.
Singh, Yogesh
Thakre, Atul
Singh, V. N.
Kumar, Ashok
author_facet Asif, M.
Singh, Yogesh
Thakre, Atul
Singh, V. N.
Kumar, Ashok
author_sort Asif, M.
collection PubMed
description This research explores a novel two-terminal heterostructure of the Pt/Cu(2)Se/Sb(2)Se(3)/FTO memristor, which exhibited essential biological synaptic functions. These synaptic functions play a critical role in emulating biological neural systems and overcoming the limitations of traditional computing architectures. By repeating a fixed pulse train, in this study, we realized a few crucial neural functions toward weight modulation, such as nonlinear conductance changes and potentiation/depression characteristics, which aid the transition of short-term memory to long-term memory. However, we also employed multilevel switching, which provides easily accessible multilevel (4-states, 2-bit) states, for high-density data storage capability along with endurance (10(2) pulse cycles for each state) in our proposed device. In terms of synaptic plasticity, the device performed well by controlling the pulse voltage and pulse width during excitatory post-synaptic current (EPSC) measurements. The spike-time-dependent plasticity (STDP) highlights their outstanding functional properties, indicating that the device can be used in artificial biological synapse applications. The artificial neural network with Pt/Cu(2)Se/Sb(2)Se(3)/FTO achieved a significant accuracy of 73% in the simulated Modified National Institute of Standards and Technology database (MNIST) pattern. The conduction mechanism of resistive switching and the artificial synaptic phenomena could be attributed to the transfer of Se(2−) ions and selenium vacancies. The neuromorphic characteristics of the Pt/Cu(2)Se/Sb(2)Se(3)/FTO devices demonstrate their potential as futuristic synaptic devices.
format Online
Article
Text
id pubmed-10142452
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher The Royal Society of Chemistry
record_format MEDLINE/PubMed
spelling pubmed-101424522023-04-29 Synaptic plasticity and learning behaviour in multilevel memristive devices Asif, M. Singh, Yogesh Thakre, Atul Singh, V. N. Kumar, Ashok RSC Adv Chemistry This research explores a novel two-terminal heterostructure of the Pt/Cu(2)Se/Sb(2)Se(3)/FTO memristor, which exhibited essential biological synaptic functions. These synaptic functions play a critical role in emulating biological neural systems and overcoming the limitations of traditional computing architectures. By repeating a fixed pulse train, in this study, we realized a few crucial neural functions toward weight modulation, such as nonlinear conductance changes and potentiation/depression characteristics, which aid the transition of short-term memory to long-term memory. However, we also employed multilevel switching, which provides easily accessible multilevel (4-states, 2-bit) states, for high-density data storage capability along with endurance (10(2) pulse cycles for each state) in our proposed device. In terms of synaptic plasticity, the device performed well by controlling the pulse voltage and pulse width during excitatory post-synaptic current (EPSC) measurements. The spike-time-dependent plasticity (STDP) highlights their outstanding functional properties, indicating that the device can be used in artificial biological synapse applications. The artificial neural network with Pt/Cu(2)Se/Sb(2)Se(3)/FTO achieved a significant accuracy of 73% in the simulated Modified National Institute of Standards and Technology database (MNIST) pattern. The conduction mechanism of resistive switching and the artificial synaptic phenomena could be attributed to the transfer of Se(2−) ions and selenium vacancies. The neuromorphic characteristics of the Pt/Cu(2)Se/Sb(2)Se(3)/FTO devices demonstrate their potential as futuristic synaptic devices. The Royal Society of Chemistry 2023-04-28 /pmc/articles/PMC10142452/ /pubmed/37124007 http://dx.doi.org/10.1039/d3ra02075d Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Asif, M.
Singh, Yogesh
Thakre, Atul
Singh, V. N.
Kumar, Ashok
Synaptic plasticity and learning behaviour in multilevel memristive devices
title Synaptic plasticity and learning behaviour in multilevel memristive devices
title_full Synaptic plasticity and learning behaviour in multilevel memristive devices
title_fullStr Synaptic plasticity and learning behaviour in multilevel memristive devices
title_full_unstemmed Synaptic plasticity and learning behaviour in multilevel memristive devices
title_short Synaptic plasticity and learning behaviour in multilevel memristive devices
title_sort synaptic plasticity and learning behaviour in multilevel memristive devices
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10142452/
https://www.ncbi.nlm.nih.gov/pubmed/37124007
http://dx.doi.org/10.1039/d3ra02075d
work_keys_str_mv AT asifm synapticplasticityandlearningbehaviourinmultilevelmemristivedevices
AT singhyogesh synapticplasticityandlearningbehaviourinmultilevelmemristivedevices
AT thakreatul synapticplasticityandlearningbehaviourinmultilevelmemristivedevices
AT singhvn synapticplasticityandlearningbehaviourinmultilevelmemristivedevices
AT kumarashok synapticplasticityandlearningbehaviourinmultilevelmemristivedevices