A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

In this paper, we will discuss the rapid progress of third-generation semiconductors with wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This architecture has high mass-production potential due to its low cost, larger size, and compatibility with CMOS-fab processes....

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Detalles Bibliográficos
Autores principales: Liu, An-Chen, Lai, Yung-Yu, Chen, Hsin-Chu, Chiu, An-Ping, Kuo, Hao-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10143529/
https://www.ncbi.nlm.nih.gov/pubmed/37420998
http://dx.doi.org/10.3390/mi14040764

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10143529/
https://www.ncbi.nlm.nih.gov/pubmed/37420998
http://dx.doi.org/10.3390/mi14040764

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