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The Role of GaN in the Heterostructure WS(2)/GaN for SERS Applications
In the application of WS(2) as a surface–enhanced Raman scattering (SERS) substrate, enhancing the charge transfer (CT) opportunity between WS(2) and analyte is an important issue for SERS efficiency. In this study, we deposited few-layer WS(2) (2–3 layers) on GaN and sapphire substrates with differ...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10143599/ https://www.ncbi.nlm.nih.gov/pubmed/37109889 http://dx.doi.org/10.3390/ma16083054 |