Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination

In this work, an electrical stability model based on surface potential is presented for amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) under positive-gate-bias stress (PBS) and light stress. In this model, the sub-gap density of states (DOSs) are depicted by exponential band tails and Ga...

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Detalles Bibliográficos
Autores principales: Huang, Xiaoming, Cao, Wei, Huang, Chenyang, Chen, Chen, Shi, Zheng, Xu, Weizong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10143689/
https://www.ncbi.nlm.nih.gov/pubmed/37421075
http://dx.doi.org/10.3390/mi14040842

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10143689/
https://www.ncbi.nlm.nih.gov/pubmed/37421075
http://dx.doi.org/10.3390/mi14040842

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