Cargando…
Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination
In this work, an electrical stability model based on surface potential is presented for amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) under positive-gate-bias stress (PBS) and light stress. In this model, the sub-gap density of states (DOSs) are depicted by exponential band tails and Ga...
| Autores principales: | , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10143689/ https://www.ncbi.nlm.nih.gov/pubmed/37421075 http://dx.doi.org/10.3390/mi14040842 |