The Accumulation of Electrical Energy Due to the Quantum-Dimensional Effects and Quantum Amplification of Sensor Sensitivity in a Nanoporous SiO(2) Matrix Filled with Synthetic Fulvic Acid

A heterostructured nanocomposite MCM-41<SFA> was formed using the encapsulation method, where a silicon dioxide matrix—MCM-41 was the host matrix and synthetic fulvic acid was the organic guest. Using the method of nitrogen sorption/desorption, a high degree of monoporosity in the studied matrix was established, with a maximum for the distribution of its pores with radii of 1.42 nm. According to the results of an X-ray structural analysis, both the matrix and the encapsulate were characterized by an amorphous structure, and the absence of a manifestation of the guest component could be caused by its nanodispersity. The electrical, conductive, and polarization properties of the encapsulate were studied with impedance spectroscopy. The nature of the changes in the frequency behavior of the impedance, dielectric permittivity, and tangent of the dielectric loss angle under normal conditions, in a constant magnetic field, and under illumination, was established. The obtained results indicated the manifestation of photo- and magneto-resistive and capacitive effects. In the studied encapsulate, the combination of a high value of ε and a value of the tgδ of less than 1 in the low-frequency range was achieved, which is a prerequisite for the realization of a quantum electric energy storage device. A confirmation of the possibility of accumulating an electric charge was obtained by measuring the I-V characteristic, which took on a hysteresis behavior.