High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET

This research presents the optimization and proposal of P- and N-type 3-stacked Si(0.8)Ge(0.2)/Si strained super-lattice FinFETs (SL FinFET) using Low-Pressure Chemical Vapor Deposition (LPCVD) epitaxy. Three device structures, Si FinFET, Si(0.8)Ge(0.2) FinFET, and Si(0.8)Ge(0.2)/Si SL FinFET, were...

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Detalles Bibliográficos
Autores principales: Yao, Yi-Ju, Yang, Ching-Ru, Tseng, Ting-Yu, Chang, Heng-Jia, Lin, Tsai-Jung, Luo, Guang-Li, Hou, Fu-Ju, Wu, Yung-Chun, Chang-Liao, Kuei-Shu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10145376/
https://www.ncbi.nlm.nih.gov/pubmed/37110895
http://dx.doi.org/10.3390/nano13081310

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