Cargando…
Interface engineering of charge-transfer excitons in 2D lateral heterostructures
The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study inv...
Autores principales: | , , , , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10147613/ https://www.ncbi.nlm.nih.gov/pubmed/37117167 http://dx.doi.org/10.1038/s41467-023-37889-9 |
_version_ | 1785034828205260800 |
---|---|
author | Rosati, Roberto Paradisanos, Ioannis Huang, Libai Gan, Ziyang George, Antony Watanabe, Kenji Taniguchi, Takashi Lombez, Laurent Renucci, Pierre Turchanin, Andrey Urbaszek, Bernhard Malic, Ermin |
author_facet | Rosati, Roberto Paradisanos, Ioannis Huang, Libai Gan, Ziyang George, Antony Watanabe, Kenji Taniguchi, Takashi Lombez, Laurent Renucci, Pierre Turchanin, Andrey Urbaszek, Bernhard Malic, Ermin |
author_sort | Rosati, Roberto |
collection | PubMed |
description | The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-encapsulated lateral MoSe(2)-WSe(2) heterostructures. Based on a fully microscopic and material-specific theory, we reveal the many-particle processes behind the formation of CT excitons and how they can be tuned via interface- and dielectric engineering. For junction widths smaller than the Coulomb-induced Bohr radius we predict the appearance of a low-energy CT exciton. The theoretical prediction is compared with experimental low-temperature photoluminescence measurements showing emission in the bound CT excitons energy range. We show that for hBN-encapsulated heterostructures, CT excitons exhibit small binding energies of just a few tens meV and at the same time large dipole moments, making them promising materials for optoelectronic applications (benefiting from an efficient exciton dissociation and fast dipole-driven exciton propagation). Our joint theory-experiment study presents a significant step towards a microscopic understanding of optical properties of technologically promising 2D lateral heterostructures. |
format | Online Article Text |
id | pubmed-10147613 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-101476132023-04-30 Interface engineering of charge-transfer excitons in 2D lateral heterostructures Rosati, Roberto Paradisanos, Ioannis Huang, Libai Gan, Ziyang George, Antony Watanabe, Kenji Taniguchi, Takashi Lombez, Laurent Renucci, Pierre Turchanin, Andrey Urbaszek, Bernhard Malic, Ermin Nat Commun Article The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-encapsulated lateral MoSe(2)-WSe(2) heterostructures. Based on a fully microscopic and material-specific theory, we reveal the many-particle processes behind the formation of CT excitons and how they can be tuned via interface- and dielectric engineering. For junction widths smaller than the Coulomb-induced Bohr radius we predict the appearance of a low-energy CT exciton. The theoretical prediction is compared with experimental low-temperature photoluminescence measurements showing emission in the bound CT excitons energy range. We show that for hBN-encapsulated heterostructures, CT excitons exhibit small binding energies of just a few tens meV and at the same time large dipole moments, making them promising materials for optoelectronic applications (benefiting from an efficient exciton dissociation and fast dipole-driven exciton propagation). Our joint theory-experiment study presents a significant step towards a microscopic understanding of optical properties of technologically promising 2D lateral heterostructures. Nature Publishing Group UK 2023-04-28 /pmc/articles/PMC10147613/ /pubmed/37117167 http://dx.doi.org/10.1038/s41467-023-37889-9 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Rosati, Roberto Paradisanos, Ioannis Huang, Libai Gan, Ziyang George, Antony Watanabe, Kenji Taniguchi, Takashi Lombez, Laurent Renucci, Pierre Turchanin, Andrey Urbaszek, Bernhard Malic, Ermin Interface engineering of charge-transfer excitons in 2D lateral heterostructures |
title | Interface engineering of charge-transfer excitons in 2D lateral heterostructures |
title_full | Interface engineering of charge-transfer excitons in 2D lateral heterostructures |
title_fullStr | Interface engineering of charge-transfer excitons in 2D lateral heterostructures |
title_full_unstemmed | Interface engineering of charge-transfer excitons in 2D lateral heterostructures |
title_short | Interface engineering of charge-transfer excitons in 2D lateral heterostructures |
title_sort | interface engineering of charge-transfer excitons in 2d lateral heterostructures |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10147613/ https://www.ncbi.nlm.nih.gov/pubmed/37117167 http://dx.doi.org/10.1038/s41467-023-37889-9 |
work_keys_str_mv | AT rosatiroberto interfaceengineeringofchargetransferexcitonsin2dlateralheterostructures AT paradisanosioannis interfaceengineeringofchargetransferexcitonsin2dlateralheterostructures AT huanglibai interfaceengineeringofchargetransferexcitonsin2dlateralheterostructures AT ganziyang interfaceengineeringofchargetransferexcitonsin2dlateralheterostructures AT georgeantony interfaceengineeringofchargetransferexcitonsin2dlateralheterostructures AT watanabekenji interfaceengineeringofchargetransferexcitonsin2dlateralheterostructures AT taniguchitakashi interfaceengineeringofchargetransferexcitonsin2dlateralheterostructures AT lombezlaurent interfaceengineeringofchargetransferexcitonsin2dlateralheterostructures AT renuccipierre interfaceengineeringofchargetransferexcitonsin2dlateralheterostructures AT turchaninandrey interfaceengineeringofchargetransferexcitonsin2dlateralheterostructures AT urbaszekbernhard interfaceengineeringofchargetransferexcitonsin2dlateralheterostructures AT malicermin interfaceengineeringofchargetransferexcitonsin2dlateralheterostructures |