Cargando…
Protocol for scalable top-down fabrication of InP nanopillars using a self-assembled random mask technique
Nanostructured III-V semiconductors are attractive for solar energy conversion applications owing to their excellent light harvesting and optoelectronic properties. Here, we present a protocol for scalable fabrication of III-V semiconductor nanopillars using a simple and cost-effective top-down appr...
Autores principales: | Soo, Joshua Zheyan, Narangari, Parvathala Reddy, Jagadish, Chennupati, Tan, Hark Hoe, Karuturi, Siva |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Elsevier
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10148223/ https://www.ncbi.nlm.nih.gov/pubmed/37083321 http://dx.doi.org/10.1016/j.xpro.2023.102237 |
Ejemplares similares
-
Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting
por: Lee, Yonghwan, et al.
Publicado: (2022) -
Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting
por: Lee, Yonghwan, et al.
Publicado: (2021) -
Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures
por: Fonseka, H. Aruni, et al.
Publicado: (2019) -
Ultralow Surface Recombination Velocity in Passivated
InGaAs/InP Nanopillars
por: Higuera-Rodriguez, A., et al.
Publicado: (2017) -
Top-down fabrication of high-uniformity nanodiamonds by self-assembled block copolymer masks
por: Zheng, Jiabao, et al.
Publicado: (2019)