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Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe(4)GeTe(2) far above room temperature
Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (T(c)) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe(4)GeTe(2) with the T(c)...
Autores principales: | , , , , , , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10148834/ https://www.ncbi.nlm.nih.gov/pubmed/37120587 http://dx.doi.org/10.1038/s41467-023-37917-8 |
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author | Wang, Hangtian Lu, Haichang Guo, Zongxia Li, Ang Wu, Peichen Li, Jing Xie, Weiran Sun, Zhimei Li, Peng Damas, Héloïse Friedel, Anna Maria Migot, Sylvie Ghanbaja, Jaafar Moreau, Luc Fagot-Revurat, Yannick Petit-Watelot, Sébastien Hauet, Thomas Robertson, John Mangin, Stéphane Zhao, Weisheng Nie, Tianxiao |
author_facet | Wang, Hangtian Lu, Haichang Guo, Zongxia Li, Ang Wu, Peichen Li, Jing Xie, Weiran Sun, Zhimei Li, Peng Damas, Héloïse Friedel, Anna Maria Migot, Sylvie Ghanbaja, Jaafar Moreau, Luc Fagot-Revurat, Yannick Petit-Watelot, Sébastien Hauet, Thomas Robertson, John Mangin, Stéphane Zhao, Weisheng Nie, Tianxiao |
author_sort | Wang, Hangtian |
collection | PubMed |
description | Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (T(c)) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe(4)GeTe(2) with the T(c) reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced T(c), which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe(4)GeTe(2) in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices. |
format | Online Article Text |
id | pubmed-10148834 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-101488342023-05-01 Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe(4)GeTe(2) far above room temperature Wang, Hangtian Lu, Haichang Guo, Zongxia Li, Ang Wu, Peichen Li, Jing Xie, Weiran Sun, Zhimei Li, Peng Damas, Héloïse Friedel, Anna Maria Migot, Sylvie Ghanbaja, Jaafar Moreau, Luc Fagot-Revurat, Yannick Petit-Watelot, Sébastien Hauet, Thomas Robertson, John Mangin, Stéphane Zhao, Weisheng Nie, Tianxiao Nat Commun Article Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (T(c)) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe(4)GeTe(2) with the T(c) reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced T(c), which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe(4)GeTe(2) in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices. Nature Publishing Group UK 2023-04-29 /pmc/articles/PMC10148834/ /pubmed/37120587 http://dx.doi.org/10.1038/s41467-023-37917-8 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Wang, Hangtian Lu, Haichang Guo, Zongxia Li, Ang Wu, Peichen Li, Jing Xie, Weiran Sun, Zhimei Li, Peng Damas, Héloïse Friedel, Anna Maria Migot, Sylvie Ghanbaja, Jaafar Moreau, Luc Fagot-Revurat, Yannick Petit-Watelot, Sébastien Hauet, Thomas Robertson, John Mangin, Stéphane Zhao, Weisheng Nie, Tianxiao Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe(4)GeTe(2) far above room temperature |
title | Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe(4)GeTe(2) far above room temperature |
title_full | Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe(4)GeTe(2) far above room temperature |
title_fullStr | Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe(4)GeTe(2) far above room temperature |
title_full_unstemmed | Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe(4)GeTe(2) far above room temperature |
title_short | Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe(4)GeTe(2) far above room temperature |
title_sort | interfacial engineering of ferromagnetism in wafer-scale van der waals fe(4)gete(2) far above room temperature |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10148834/ https://www.ncbi.nlm.nih.gov/pubmed/37120587 http://dx.doi.org/10.1038/s41467-023-37917-8 |
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