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Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components,...

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Detalles Bibliográficos
Autores principales: Zhai, Li, Gebre, Sara T., Chen, Bo, Xu, Dan, Chen, Junze, Li, Zijian, Liu, Yawei, Yang, Hua, Ling, Chongyi, Ge, Yiyao, Zhai, Wei, Chen, Changsheng, Ma, Lu, Zhang, Qinghua, Li, Xuefei, Yan, Yujie, Huang, Xinyu, Li, Lujiang, Guan, Zhiqiang, Tao, Chen-Lei, Huang, Zhiqi, Wang, Hongyi, Liang, Jinze, Zhu, Ye, Lee, Chun-Sing, Wang, Peng, Zhang, Chunfeng, Gu, Lin, Du, Yonghua, Lian, Tianquan, Zhang, Hua, Wu, Xue-Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10156852/
https://www.ncbi.nlm.nih.gov/pubmed/37137913
http://dx.doi.org/10.1038/s41467-023-38237-7
Descripción
Sumario:Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.