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Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components,...

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Autores principales: Zhai, Li, Gebre, Sara T., Chen, Bo, Xu, Dan, Chen, Junze, Li, Zijian, Liu, Yawei, Yang, Hua, Ling, Chongyi, Ge, Yiyao, Zhai, Wei, Chen, Changsheng, Ma, Lu, Zhang, Qinghua, Li, Xuefei, Yan, Yujie, Huang, Xinyu, Li, Lujiang, Guan, Zhiqiang, Tao, Chen-Lei, Huang, Zhiqi, Wang, Hongyi, Liang, Jinze, Zhu, Ye, Lee, Chun-Sing, Wang, Peng, Zhang, Chunfeng, Gu, Lin, Du, Yonghua, Lian, Tianquan, Zhang, Hua, Wu, Xue-Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10156852/
https://www.ncbi.nlm.nih.gov/pubmed/37137913
http://dx.doi.org/10.1038/s41467-023-38237-7
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author Zhai, Li
Gebre, Sara T.
Chen, Bo
Xu, Dan
Chen, Junze
Li, Zijian
Liu, Yawei
Yang, Hua
Ling, Chongyi
Ge, Yiyao
Zhai, Wei
Chen, Changsheng
Ma, Lu
Zhang, Qinghua
Li, Xuefei
Yan, Yujie
Huang, Xinyu
Li, Lujiang
Guan, Zhiqiang
Tao, Chen-Lei
Huang, Zhiqi
Wang, Hongyi
Liang, Jinze
Zhu, Ye
Lee, Chun-Sing
Wang, Peng
Zhang, Chunfeng
Gu, Lin
Du, Yonghua
Lian, Tianquan
Zhang, Hua
Wu, Xue-Jun
author_facet Zhai, Li
Gebre, Sara T.
Chen, Bo
Xu, Dan
Chen, Junze
Li, Zijian
Liu, Yawei
Yang, Hua
Ling, Chongyi
Ge, Yiyao
Zhai, Wei
Chen, Changsheng
Ma, Lu
Zhang, Qinghua
Li, Xuefei
Yan, Yujie
Huang, Xinyu
Li, Lujiang
Guan, Zhiqiang
Tao, Chen-Lei
Huang, Zhiqi
Wang, Hongyi
Liang, Jinze
Zhu, Ye
Lee, Chun-Sing
Wang, Peng
Zhang, Chunfeng
Gu, Lin
Du, Yonghua
Lian, Tianquan
Zhang, Hua
Wu, Xue-Jun
author_sort Zhai, Li
collection PubMed
description Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.
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spelling pubmed-101568522023-05-05 Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer Zhai, Li Gebre, Sara T. Chen, Bo Xu, Dan Chen, Junze Li, Zijian Liu, Yawei Yang, Hua Ling, Chongyi Ge, Yiyao Zhai, Wei Chen, Changsheng Ma, Lu Zhang, Qinghua Li, Xuefei Yan, Yujie Huang, Xinyu Li, Lujiang Guan, Zhiqiang Tao, Chen-Lei Huang, Zhiqi Wang, Hongyi Liang, Jinze Zhu, Ye Lee, Chun-Sing Wang, Peng Zhang, Chunfeng Gu, Lin Du, Yonghua Lian, Tianquan Zhang, Hua Wu, Xue-Jun Nat Commun Article Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes. Nature Publishing Group UK 2023-05-03 /pmc/articles/PMC10156852/ /pubmed/37137913 http://dx.doi.org/10.1038/s41467-023-38237-7 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Zhai, Li
Gebre, Sara T.
Chen, Bo
Xu, Dan
Chen, Junze
Li, Zijian
Liu, Yawei
Yang, Hua
Ling, Chongyi
Ge, Yiyao
Zhai, Wei
Chen, Changsheng
Ma, Lu
Zhang, Qinghua
Li, Xuefei
Yan, Yujie
Huang, Xinyu
Li, Lujiang
Guan, Zhiqiang
Tao, Chen-Lei
Huang, Zhiqi
Wang, Hongyi
Liang, Jinze
Zhu, Ye
Lee, Chun-Sing
Wang, Peng
Zhang, Chunfeng
Gu, Lin
Du, Yonghua
Lian, Tianquan
Zhang, Hua
Wu, Xue-Jun
Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer
title Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer
title_full Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer
title_fullStr Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer
title_full_unstemmed Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer
title_short Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer
title_sort epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10156852/
https://www.ncbi.nlm.nih.gov/pubmed/37137913
http://dx.doi.org/10.1038/s41467-023-38237-7
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