Correction: Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation

Correction for ‘Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation’ by Mohamed A. Nawwar et al., RSC Adv., 2023, 13, 9154–9167, https://doi.org/10.1039/D3RA00805C.

Detalles Bibliográficos
Autores principales: Nawwar, Mohamed A., Abo Ghazala, Magdy S., Sharaf El-Deen, Lobna M., Anis, Badawi, El-Shaer, Abdelhamid, Elseman, Ahmed Mourtada, Rashad, Mohamed M., Kashyout, Abd El-hady B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10173701/
https://www.ncbi.nlm.nih.gov/pubmed/37180013
http://dx.doi.org/10.1039/d3ra90040a
Descripción
Sumario:Correction for ‘Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation’ by Mohamed A. Nawwar et al., RSC Adv., 2023, 13, 9154–9167, https://doi.org/10.1039/D3RA00805C.

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