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Waveguide-Integrated Light-Emitting Metal–Insulator–Graphene Tunnel Junctions

[Image: see text] Ultrafast interfacing of electrical and optical signals at the nanoscale is highly desired for on-chip applications including optical interconnects and data processing devices. Here, we report electrically driven nanoscale optical sources based on metal–insulator–graphene tunnel ju...

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Detalles Bibliográficos
Autores principales: Liu, Lufang, Krasavin, Alexey V., Li, Jialin, Li, Linjun, Yang, Liu, Guo, Xin, Dai, Daoxin, Zayats, Anatoly V., Tong, Limin, Wang, Pan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10176563/
https://www.ncbi.nlm.nih.gov/pubmed/37097286
http://dx.doi.org/10.1021/acs.nanolett.2c04975
Descripción
Sumario:[Image: see text] Ultrafast interfacing of electrical and optical signals at the nanoscale is highly desired for on-chip applications including optical interconnects and data processing devices. Here, we report electrically driven nanoscale optical sources based on metal–insulator–graphene tunnel junctions (MIG-TJs), featuring waveguided output with broadband spectral characteristics. Electrically driven inelastic tunneling in a MIG-TJ, realized by integrating a silver nanowire with graphene, provides broadband excitation of plasmonic modes in the junction with propagation lengths of several micrometers (∼10 times larger than that for metal–insulator–metal junctions), which therefore propagate toward the junction edge with low loss and couple to the nanowire waveguide with an efficiency of ∼70% (∼1000 times higher than that for metal–insulator–metal junctions). Alternatively, lateral coupling of the MIG-TJ to a semiconductor nanowire provides a platform for efficient outcoupling of electrically driven plasmonic signals to low-loss photonic waveguides, showing potential for applications at various integration levels.