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Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN
A detailed analysis of morphology of gallium nitride crystal growth obtained by ammonothermal and halide vapor phase epitaxy methods was carried out. The work was conducted to determine the source of triangular planar defects visible in X-ray topography as areas with locally different lattice parame...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179837/ https://www.ncbi.nlm.nih.gov/pubmed/37176244 http://dx.doi.org/10.3390/ma16093360 |
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author | Sochacki, Tomasz Kucharski, Robert Grabianska, Karolina Weyher, Jan L. Zajac, Magdalena A. Iwinska, Malgorzata Kirste, Lutz Bockowski, Michal |
author_facet | Sochacki, Tomasz Kucharski, Robert Grabianska, Karolina Weyher, Jan L. Zajac, Magdalena A. Iwinska, Malgorzata Kirste, Lutz Bockowski, Michal |
author_sort | Sochacki, Tomasz |
collection | PubMed |
description | A detailed analysis of morphology of gallium nitride crystal growth obtained by ammonothermal and halide vapor phase epitaxy methods was carried out. The work was conducted to determine the source of triangular planar defects visible in X-ray topography as areas with locally different lattice parameters. It is shown that the occurrence of these defects is related to growth hillocks. Particular attention was paid to analyzing the manner and consequences of merging hillocks. In the course of the study, the nature of the mentioned defects and the cause of their formation were determined. It was established that the appearance of the defects depends on the angle formed between the steps located on the sides of two adjacent hillocks. A universal growth model is presented to explain the cause of heterogeneity during the merging of growth hillocks. |
format | Online Article Text |
id | pubmed-10179837 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-101798372023-05-13 Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN Sochacki, Tomasz Kucharski, Robert Grabianska, Karolina Weyher, Jan L. Zajac, Magdalena A. Iwinska, Malgorzata Kirste, Lutz Bockowski, Michal Materials (Basel) Article A detailed analysis of morphology of gallium nitride crystal growth obtained by ammonothermal and halide vapor phase epitaxy methods was carried out. The work was conducted to determine the source of triangular planar defects visible in X-ray topography as areas with locally different lattice parameters. It is shown that the occurrence of these defects is related to growth hillocks. Particular attention was paid to analyzing the manner and consequences of merging hillocks. In the course of the study, the nature of the mentioned defects and the cause of their formation were determined. It was established that the appearance of the defects depends on the angle formed between the steps located on the sides of two adjacent hillocks. A universal growth model is presented to explain the cause of heterogeneity during the merging of growth hillocks. MDPI 2023-04-25 /pmc/articles/PMC10179837/ /pubmed/37176244 http://dx.doi.org/10.3390/ma16093360 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Sochacki, Tomasz Kucharski, Robert Grabianska, Karolina Weyher, Jan L. Zajac, Magdalena A. Iwinska, Malgorzata Kirste, Lutz Bockowski, Michal Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN |
title | Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN |
title_full | Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN |
title_fullStr | Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN |
title_full_unstemmed | Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN |
title_short | Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN |
title_sort | evolution of the growth mode and its consequences during bulk crystallization of gan |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179837/ https://www.ncbi.nlm.nih.gov/pubmed/37176244 http://dx.doi.org/10.3390/ma16093360 |
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