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Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN

A detailed analysis of morphology of gallium nitride crystal growth obtained by ammonothermal and halide vapor phase epitaxy methods was carried out. The work was conducted to determine the source of triangular planar defects visible in X-ray topography as areas with locally different lattice parame...

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Autores principales: Sochacki, Tomasz, Kucharski, Robert, Grabianska, Karolina, Weyher, Jan L., Zajac, Magdalena A., Iwinska, Malgorzata, Kirste, Lutz, Bockowski, Michal
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179837/
https://www.ncbi.nlm.nih.gov/pubmed/37176244
http://dx.doi.org/10.3390/ma16093360
_version_ 1785041192437678080
author Sochacki, Tomasz
Kucharski, Robert
Grabianska, Karolina
Weyher, Jan L.
Zajac, Magdalena A.
Iwinska, Malgorzata
Kirste, Lutz
Bockowski, Michal
author_facet Sochacki, Tomasz
Kucharski, Robert
Grabianska, Karolina
Weyher, Jan L.
Zajac, Magdalena A.
Iwinska, Malgorzata
Kirste, Lutz
Bockowski, Michal
author_sort Sochacki, Tomasz
collection PubMed
description A detailed analysis of morphology of gallium nitride crystal growth obtained by ammonothermal and halide vapor phase epitaxy methods was carried out. The work was conducted to determine the source of triangular planar defects visible in X-ray topography as areas with locally different lattice parameters. It is shown that the occurrence of these defects is related to growth hillocks. Particular attention was paid to analyzing the manner and consequences of merging hillocks. In the course of the study, the nature of the mentioned defects and the cause of their formation were determined. It was established that the appearance of the defects depends on the angle formed between the steps located on the sides of two adjacent hillocks. A universal growth model is presented to explain the cause of heterogeneity during the merging of growth hillocks.
format Online
Article
Text
id pubmed-10179837
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-101798372023-05-13 Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN Sochacki, Tomasz Kucharski, Robert Grabianska, Karolina Weyher, Jan L. Zajac, Magdalena A. Iwinska, Malgorzata Kirste, Lutz Bockowski, Michal Materials (Basel) Article A detailed analysis of morphology of gallium nitride crystal growth obtained by ammonothermal and halide vapor phase epitaxy methods was carried out. The work was conducted to determine the source of triangular planar defects visible in X-ray topography as areas with locally different lattice parameters. It is shown that the occurrence of these defects is related to growth hillocks. Particular attention was paid to analyzing the manner and consequences of merging hillocks. In the course of the study, the nature of the mentioned defects and the cause of their formation were determined. It was established that the appearance of the defects depends on the angle formed between the steps located on the sides of two adjacent hillocks. A universal growth model is presented to explain the cause of heterogeneity during the merging of growth hillocks. MDPI 2023-04-25 /pmc/articles/PMC10179837/ /pubmed/37176244 http://dx.doi.org/10.3390/ma16093360 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Sochacki, Tomasz
Kucharski, Robert
Grabianska, Karolina
Weyher, Jan L.
Zajac, Magdalena A.
Iwinska, Malgorzata
Kirste, Lutz
Bockowski, Michal
Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN
title Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN
title_full Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN
title_fullStr Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN
title_full_unstemmed Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN
title_short Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN
title_sort evolution of the growth mode and its consequences during bulk crystallization of gan
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179837/
https://www.ncbi.nlm.nih.gov/pubmed/37176244
http://dx.doi.org/10.3390/ma16093360
work_keys_str_mv AT sochackitomasz evolutionofthegrowthmodeanditsconsequencesduringbulkcrystallizationofgan
AT kucharskirobert evolutionofthegrowthmodeanditsconsequencesduringbulkcrystallizationofgan
AT grabianskakarolina evolutionofthegrowthmodeanditsconsequencesduringbulkcrystallizationofgan
AT weyherjanl evolutionofthegrowthmodeanditsconsequencesduringbulkcrystallizationofgan
AT zajacmagdalenaa evolutionofthegrowthmodeanditsconsequencesduringbulkcrystallizationofgan
AT iwinskamalgorzata evolutionofthegrowthmodeanditsconsequencesduringbulkcrystallizationofgan
AT kirstelutz evolutionofthegrowthmodeanditsconsequencesduringbulkcrystallizationofgan
AT bockowskimichal evolutionofthegrowthmodeanditsconsequencesduringbulkcrystallizationofgan