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Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN

A detailed analysis of morphology of gallium nitride crystal growth obtained by ammonothermal and halide vapor phase epitaxy methods was carried out. The work was conducted to determine the source of triangular planar defects visible in X-ray topography as areas with locally different lattice parame...

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Detalles Bibliográficos
Autores principales:	Sochacki, Tomasz, Kucharski, Robert, Grabianska, Karolina, Weyher, Jan L., Zajac, Magdalena A., Iwinska, Malgorzata, Kirste, Lutz, Bockowski, Michal
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179837/ https://www.ncbi.nlm.nih.gov/pubmed/37176244 http://dx.doi.org/10.3390/ma16093360

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