Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes

We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced during chemical vapor deposition (CVD) crystal growth. Boron i...

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Detalles Bibliográficos
Autores principales: Knezevic, Tihomir, Jelavić, Eva, Yamazaki, Yuichi, Ohshima, Takeshi, Makino, Takahiro, Capan, Ivana
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179978/
https://www.ncbi.nlm.nih.gov/pubmed/37176229
http://dx.doi.org/10.3390/ma16093347
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author Knezevic, Tihomir
Jelavić, Eva
Yamazaki, Yuichi
Ohshima, Takeshi
Makino, Takahiro
Capan, Ivana
author_facet Knezevic, Tihomir
Jelavić, Eva
Yamazaki, Yuichi
Ohshima, Takeshi
Makino, Takahiro
Capan, Ivana
author_sort Knezevic, Tihomir
collection PubMed
description We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced during chemical vapor deposition (CVD) crystal growth. Boron incorporation was found to lead to the appearance of at least two boron-related deep-level defects, namely, shallow (B) and deep boron (D-center), with concentrations as high as 1 × 10(15) cm(−3). Even though the boron concentration exceeded the nitrogen doping concentration by almost an order of magnitude, the steady-state electrical characteristics of the n-type 4H-SiC SBDs did not deteriorate.
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spelling pubmed-101799782023-05-13 Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes Knezevic, Tihomir Jelavić, Eva Yamazaki, Yuichi Ohshima, Takeshi Makino, Takahiro Capan, Ivana Materials (Basel) Communication We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced during chemical vapor deposition (CVD) crystal growth. Boron incorporation was found to lead to the appearance of at least two boron-related deep-level defects, namely, shallow (B) and deep boron (D-center), with concentrations as high as 1 × 10(15) cm(−3). Even though the boron concentration exceeded the nitrogen doping concentration by almost an order of magnitude, the steady-state electrical characteristics of the n-type 4H-SiC SBDs did not deteriorate. MDPI 2023-04-25 /pmc/articles/PMC10179978/ /pubmed/37176229 http://dx.doi.org/10.3390/ma16093347 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Communication
Knezevic, Tihomir
Jelavić, Eva
Yamazaki, Yuichi
Ohshima, Takeshi
Makino, Takahiro
Capan, Ivana
Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes
title Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes
title_full Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes
title_fullStr Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes
title_full_unstemmed Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes
title_short Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes
title_sort boron-related defects in n-type 4h-sic schottky barrier diodes
topic Communication
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179978/
https://www.ncbi.nlm.nih.gov/pubmed/37176229
http://dx.doi.org/10.3390/ma16093347
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