Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes

We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced during chemical vapor deposition (CVD) crystal growth. Boron i...

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Detalles Bibliográficos
Autores principales: Knezevic, Tihomir, Jelavić, Eva, Yamazaki, Yuichi, Ohshima, Takeshi, Makino, Takahiro, Capan, Ivana
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179978/
https://www.ncbi.nlm.nih.gov/pubmed/37176229
http://dx.doi.org/10.3390/ma16093347

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179978/
https://www.ncbi.nlm.nih.gov/pubmed/37176229
http://dx.doi.org/10.3390/ma16093347

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