Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation

The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. The main characteristic...

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Detalles Bibliográficos
Autores principales: Chen, Jibing, Liu, Bowen, Hu, Maohui, Huang, Shisen, Yu, Shanji, Wu, Yiping, Yang, Junsheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180435/
https://www.ncbi.nlm.nih.gov/pubmed/37176386
http://dx.doi.org/10.3390/ma16093504

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180435/
https://www.ncbi.nlm.nih.gov/pubmed/37176386
http://dx.doi.org/10.3390/ma16093504

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