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Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation

The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. The main characteristic...

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Detalles Bibliográficos
Autores principales:	Chen, Jibing, Liu, Bowen, Hu, Maohui, Huang, Shisen, Yu, Shanji, Wu, Yiping, Yang, Junsheng
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180435/ https://www.ncbi.nlm.nih.gov/pubmed/37176386 http://dx.doi.org/10.3390/ma16093504

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