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A narrow band gap non-fullerene electron acceptor based on a dithieno-3,2-b:2′,3′-dlpyrrole unit for high performance organic solar cells with minimal highest occupied molecular orbital offset

Here, a new narrow band gap non-fullerene small molecular acceptor (NFSMA) based on a dithieno-3,2-b:2′,3′-dlpyrrole(DTP) unit, namely SNIC-F, was designed and synthesized. Due to the strong electron-donating ability of the DTP-based fused-ring core, SNIC-F showed a strong intramolecular-charge tran...

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Detalles Bibliográficos
Autores principales: Zeng, Guang, Li, Hanming, Tan, Fang, Xin, Yue, Zhang, Shengdong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10183802/
https://www.ncbi.nlm.nih.gov/pubmed/37197679
http://dx.doi.org/10.1039/d3ra01021j
Descripción
Sumario:Here, a new narrow band gap non-fullerene small molecular acceptor (NFSMA) based on a dithieno-3,2-b:2′,3′-dlpyrrole(DTP) unit, namely SNIC-F, was designed and synthesized. Due to the strong electron-donating ability of the DTP-based fused-ring core, SNIC-F showed a strong intramolecular-charge transfer (ICT) effect and thus gave a narrow band gap of 1.32 eV. Benefiting from the low band gap and efficient charge separation, when pairing with a copolymer PBTIBDTT, the device optimized by 0.5% 1-CN gave a high short circuit current (J(sc)) of 19.64 mA cm(−2). In addition, a high open-circuit voltage (V(oc)) of 0.83 V was obtained due to the near 0 eV highest occupied molecular orbital (HOMO) offset between PBTIBDTT and SNIC-F. As a result, a high power conversion efficiency (PCE) of 11.25% was obtained, and the PCE was maintained above 9.2% as the active layer thickness increased from 100 nm to 250 nm. Our work indicated that designing a narrow band gap NFSMA-based DTP unit and blending it with a polymer donor with small HOMO offset is an efficient strategy for achieving high performance OSCs.