Synaptic plasticity realized by selective oxidation of TiS(3) nanosheet for neuromorphic devices

Memristive devices operating analogous to biology synapses demonstrate great potential for neuromorphic applications. Here, we reported the space-confined vapor synthesis of ultrathin titanium trisulfide (TiS(3)) nanosheets, and subsequent laser manufacturing of a TiS(3)–TiO(x)–TiS(3) in-plane heterojunction for memristor applications. Due to the flux-controlled migration and aggregation of oxygen vacancies, the two-terminal memristor demonstrates reliable “analog” switching behaviors, in which the channel conductance can be incrementally adjusted by tuning the duration and sequence of programming voltage. The device allows the emulation of basic synaptic functions, featuring excellent linearity and symmetry in conductance change during long-term potentiation/depression processes. The small asymmetric ratio of 0.15 enables it to be integrated into a neural network for the pattern recognition task with a high accuracy of 90%. The results demonstrate the great potential of TiS(3)-based synaptic devices for neuromorphic applications.