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Synaptic plasticity realized by selective oxidation of TiS(3) nanosheet for neuromorphic devices

Memristive devices operating analogous to biology synapses demonstrate great potential for neuromorphic applications. Here, we reported the space-confined vapor synthesis of ultrathin titanium trisulfide (TiS(3)) nanosheets, and subsequent laser manufacturing of a TiS(3)–TiO(x)–TiS(3) in-plane heter...

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Autores principales: Qin, Jing-Kai, Sun, Hai-Lin, Huang, Pei-Yu, Li, Yang, Zhen, Liang, Xu, Cheng-Yan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10184000/
https://www.ncbi.nlm.nih.gov/pubmed/37197181
http://dx.doi.org/10.1039/d3ra00782k
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author Qin, Jing-Kai
Sun, Hai-Lin
Huang, Pei-Yu
Li, Yang
Zhen, Liang
Xu, Cheng-Yan
author_facet Qin, Jing-Kai
Sun, Hai-Lin
Huang, Pei-Yu
Li, Yang
Zhen, Liang
Xu, Cheng-Yan
author_sort Qin, Jing-Kai
collection PubMed
description Memristive devices operating analogous to biology synapses demonstrate great potential for neuromorphic applications. Here, we reported the space-confined vapor synthesis of ultrathin titanium trisulfide (TiS(3)) nanosheets, and subsequent laser manufacturing of a TiS(3)–TiO(x)–TiS(3) in-plane heterojunction for memristor applications. Due to the flux-controlled migration and aggregation of oxygen vacancies, the two-terminal memristor demonstrates reliable “analog” switching behaviors, in which the channel conductance can be incrementally adjusted by tuning the duration and sequence of programming voltage. The device allows the emulation of basic synaptic functions, featuring excellent linearity and symmetry in conductance change during long-term potentiation/depression processes. The small asymmetric ratio of 0.15 enables it to be integrated into a neural network for the pattern recognition task with a high accuracy of 90%. The results demonstrate the great potential of TiS(3)-based synaptic devices for neuromorphic applications.
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spelling pubmed-101840002023-05-16 Synaptic plasticity realized by selective oxidation of TiS(3) nanosheet for neuromorphic devices Qin, Jing-Kai Sun, Hai-Lin Huang, Pei-Yu Li, Yang Zhen, Liang Xu, Cheng-Yan RSC Adv Chemistry Memristive devices operating analogous to biology synapses demonstrate great potential for neuromorphic applications. Here, we reported the space-confined vapor synthesis of ultrathin titanium trisulfide (TiS(3)) nanosheets, and subsequent laser manufacturing of a TiS(3)–TiO(x)–TiS(3) in-plane heterojunction for memristor applications. Due to the flux-controlled migration and aggregation of oxygen vacancies, the two-terminal memristor demonstrates reliable “analog” switching behaviors, in which the channel conductance can be incrementally adjusted by tuning the duration and sequence of programming voltage. The device allows the emulation of basic synaptic functions, featuring excellent linearity and symmetry in conductance change during long-term potentiation/depression processes. The small asymmetric ratio of 0.15 enables it to be integrated into a neural network for the pattern recognition task with a high accuracy of 90%. The results demonstrate the great potential of TiS(3)-based synaptic devices for neuromorphic applications. The Royal Society of Chemistry 2023-05-15 /pmc/articles/PMC10184000/ /pubmed/37197181 http://dx.doi.org/10.1039/d3ra00782k Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Qin, Jing-Kai
Sun, Hai-Lin
Huang, Pei-Yu
Li, Yang
Zhen, Liang
Xu, Cheng-Yan
Synaptic plasticity realized by selective oxidation of TiS(3) nanosheet for neuromorphic devices
title Synaptic plasticity realized by selective oxidation of TiS(3) nanosheet for neuromorphic devices
title_full Synaptic plasticity realized by selective oxidation of TiS(3) nanosheet for neuromorphic devices
title_fullStr Synaptic plasticity realized by selective oxidation of TiS(3) nanosheet for neuromorphic devices
title_full_unstemmed Synaptic plasticity realized by selective oxidation of TiS(3) nanosheet for neuromorphic devices
title_short Synaptic plasticity realized by selective oxidation of TiS(3) nanosheet for neuromorphic devices
title_sort synaptic plasticity realized by selective oxidation of tis(3) nanosheet for neuromorphic devices
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10184000/
https://www.ncbi.nlm.nih.gov/pubmed/37197181
http://dx.doi.org/10.1039/d3ra00782k
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