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Parasitic capacitance modeling and measurements of conductive yarns for e-textile devices
Conductive yarns have emerged as a viable alternative to metallic wires in e-Textile devices, such as antennas, inductors, interconnects, and more, which are integral components of smart clothing applications. But the parasitic capacitance induced by their micro-structure has not been fully understo...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10185586/ https://www.ncbi.nlm.nih.gov/pubmed/37188687 http://dx.doi.org/10.1038/s41467-023-38319-6 |
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author | Qu, Ziqi Zhu, Zhechen Liu, Yulong Yu, Mengxia Ye, Terry Tao |
author_facet | Qu, Ziqi Zhu, Zhechen Liu, Yulong Yu, Mengxia Ye, Terry Tao |
author_sort | Qu, Ziqi |
collection | PubMed |
description | Conductive yarns have emerged as a viable alternative to metallic wires in e-Textile devices, such as antennas, inductors, interconnects, and more, which are integral components of smart clothing applications. But the parasitic capacitance induced by their micro-structure has not been fully understood. This capacitance greatly affects device performance in high-frequency applications. We propose a lump-sum and turn-to-turn model of an air-core helical inductor constructed from conductive yarns, and systematically analyze and quantify the parasitic elements of conductive yarns. Using three commercial conductive yarns as examples, we compare the frequency response of copper-based and yarn-based inductors with identical structures to extract the parasitic capacitance. Our measurements show that the unit-length parasitic capacitance of commercial conductive yarns ranges from 1 fF/cm to 3 fF/cm, depending on the yarn’s microstructure. These measurements offer significant quantitative estimation of conductive yarn parasitic elements and provide valuable design and characterization guidelines for e-Textile devices. |
format | Online Article Text |
id | pubmed-10185586 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-101855862023-05-17 Parasitic capacitance modeling and measurements of conductive yarns for e-textile devices Qu, Ziqi Zhu, Zhechen Liu, Yulong Yu, Mengxia Ye, Terry Tao Nat Commun Article Conductive yarns have emerged as a viable alternative to metallic wires in e-Textile devices, such as antennas, inductors, interconnects, and more, which are integral components of smart clothing applications. But the parasitic capacitance induced by their micro-structure has not been fully understood. This capacitance greatly affects device performance in high-frequency applications. We propose a lump-sum and turn-to-turn model of an air-core helical inductor constructed from conductive yarns, and systematically analyze and quantify the parasitic elements of conductive yarns. Using three commercial conductive yarns as examples, we compare the frequency response of copper-based and yarn-based inductors with identical structures to extract the parasitic capacitance. Our measurements show that the unit-length parasitic capacitance of commercial conductive yarns ranges from 1 fF/cm to 3 fF/cm, depending on the yarn’s microstructure. These measurements offer significant quantitative estimation of conductive yarn parasitic elements and provide valuable design and characterization guidelines for e-Textile devices. Nature Publishing Group UK 2023-05-15 /pmc/articles/PMC10185586/ /pubmed/37188687 http://dx.doi.org/10.1038/s41467-023-38319-6 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Qu, Ziqi Zhu, Zhechen Liu, Yulong Yu, Mengxia Ye, Terry Tao Parasitic capacitance modeling and measurements of conductive yarns for e-textile devices |
title | Parasitic capacitance modeling and measurements of conductive yarns for e-textile devices |
title_full | Parasitic capacitance modeling and measurements of conductive yarns for e-textile devices |
title_fullStr | Parasitic capacitance modeling and measurements of conductive yarns for e-textile devices |
title_full_unstemmed | Parasitic capacitance modeling and measurements of conductive yarns for e-textile devices |
title_short | Parasitic capacitance modeling and measurements of conductive yarns for e-textile devices |
title_sort | parasitic capacitance modeling and measurements of conductive yarns for e-textile devices |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10185586/ https://www.ncbi.nlm.nih.gov/pubmed/37188687 http://dx.doi.org/10.1038/s41467-023-38319-6 |
work_keys_str_mv | AT quziqi parasiticcapacitancemodelingandmeasurementsofconductiveyarnsforetextiledevices AT zhuzhechen parasiticcapacitancemodelingandmeasurementsofconductiveyarnsforetextiledevices AT liuyulong parasiticcapacitancemodelingandmeasurementsofconductiveyarnsforetextiledevices AT yumengxia parasiticcapacitancemodelingandmeasurementsofconductiveyarnsforetextiledevices AT yeterrytao parasiticcapacitancemodelingandmeasurementsofconductiveyarnsforetextiledevices |