A-Site Cation Dependence of Self-Healing in Polycrystalline APbI(3) Perovskite Films

[Image: see text] In terms of sustainable use, halide perovskite (HaP) semiconductors have a strong advantage over most other classes of materials for (opto)electronics, as they can self-heal (SH) from photodamage. While there is considerable literature on SH in devices, where it may not be clear exactly where damage and SH occur, there is much less on the HaP material itself. Here we perform “fluorescence recovery after photobleaching” (FRAP) measurements to study SH on polycrystalline thin films for which encapsulation is critical to achieving complete and fast self-healing. We compare SH in three photoactive APbI(3) perovskite films by varying the A-site cation ranging from (relatively) small inorganic Cs through medium-sized MA to large FA (the last two are organic cations). While the A cation is often considered electronically relatively inactive, it significantly affects both SH kinetics and the threshold for photodamage. The SH kinetics are markedly faster for γ-CsPbI(3) and α-FAPbI(3) than for MAPbI(3). Furthermore, γ-CsPbI(3) exhibits an intricate interplay between photoinduced darkening and brightening. We suggest possible explanations for the observed differences in SH behavior. This study’s results are essential for identifying absorber materials that can regain intrinsic, insolation-induced photodamage-linked efficiency loss during its rest cycles, thus enabling applications such as autonomously sustainable electronics.