Cargando…
2D materials readiness for the transistor performance breakthrough
As the size of the transistor scales down, this strategy has confronted challenges because of the fundamental limits of silicon materials. Besides, more and more energy and time are consumed by the data transmission out of transistor computing because of the speed mismatching between the computing a...
Autores principales: | , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Elsevier
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10192534/ https://www.ncbi.nlm.nih.gov/pubmed/37216126 http://dx.doi.org/10.1016/j.isci.2023.106673 |
_version_ | 1785043642475347968 |
---|---|
author | Zhang, Qing Liu, Chunsen Zhou, Peng |
author_facet | Zhang, Qing Liu, Chunsen Zhou, Peng |
author_sort | Zhang, Qing |
collection | PubMed |
description | As the size of the transistor scales down, this strategy has confronted challenges because of the fundamental limits of silicon materials. Besides, more and more energy and time are consumed by the data transmission out of transistor computing because of the speed mismatching between the computing and memory. To meet the energy efficiency demands of big data computing, the transistor should have a smaller feature size and store data faster to overcome the energy burden of computing and data transfer. Electron transport in two-dimensional (2D) materials is constrained within a 2D plane and different materials are assembled by the van der Waals force. Owning to the atomic thickness and dangling-bond-free surface, 2D materials have demonstrated advantages in transistor scaling-down and heterogeneous structure innovation. In this review, from the performance breakthrough of 2D transistors, we discuss the opportunities, progress and challenges of 2D materials in transistor applications. |
format | Online Article Text |
id | pubmed-10192534 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Elsevier |
record_format | MEDLINE/PubMed |
spelling | pubmed-101925342023-05-19 2D materials readiness for the transistor performance breakthrough Zhang, Qing Liu, Chunsen Zhou, Peng iScience Review As the size of the transistor scales down, this strategy has confronted challenges because of the fundamental limits of silicon materials. Besides, more and more energy and time are consumed by the data transmission out of transistor computing because of the speed mismatching between the computing and memory. To meet the energy efficiency demands of big data computing, the transistor should have a smaller feature size and store data faster to overcome the energy burden of computing and data transfer. Electron transport in two-dimensional (2D) materials is constrained within a 2D plane and different materials are assembled by the van der Waals force. Owning to the atomic thickness and dangling-bond-free surface, 2D materials have demonstrated advantages in transistor scaling-down and heterogeneous structure innovation. In this review, from the performance breakthrough of 2D transistors, we discuss the opportunities, progress and challenges of 2D materials in transistor applications. Elsevier 2023-04-19 /pmc/articles/PMC10192534/ /pubmed/37216126 http://dx.doi.org/10.1016/j.isci.2023.106673 Text en © 2023 The Authors https://creativecommons.org/licenses/by/4.0/This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Review Zhang, Qing Liu, Chunsen Zhou, Peng 2D materials readiness for the transistor performance breakthrough |
title | 2D materials readiness for the transistor performance breakthrough |
title_full | 2D materials readiness for the transistor performance breakthrough |
title_fullStr | 2D materials readiness for the transistor performance breakthrough |
title_full_unstemmed | 2D materials readiness for the transistor performance breakthrough |
title_short | 2D materials readiness for the transistor performance breakthrough |
title_sort | 2d materials readiness for the transistor performance breakthrough |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10192534/ https://www.ncbi.nlm.nih.gov/pubmed/37216126 http://dx.doi.org/10.1016/j.isci.2023.106673 |
work_keys_str_mv | AT zhangqing 2dmaterialsreadinessforthetransistorperformancebreakthrough AT liuchunsen 2dmaterialsreadinessforthetransistorperformancebreakthrough AT zhoupeng 2dmaterialsreadinessforthetransistorperformancebreakthrough |