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2D materials readiness for the transistor performance breakthrough

As the size of the transistor scales down, this strategy has confronted challenges because of the fundamental limits of silicon materials. Besides, more and more energy and time are consumed by the data transmission out of transistor computing because of the speed mismatching between the computing a...

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Detalles Bibliográficos
Autores principales: Zhang, Qing, Liu, Chunsen, Zhou, Peng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10192534/
https://www.ncbi.nlm.nih.gov/pubmed/37216126
http://dx.doi.org/10.1016/j.isci.2023.106673
_version_ 1785043642475347968
author Zhang, Qing
Liu, Chunsen
Zhou, Peng
author_facet Zhang, Qing
Liu, Chunsen
Zhou, Peng
author_sort Zhang, Qing
collection PubMed
description As the size of the transistor scales down, this strategy has confronted challenges because of the fundamental limits of silicon materials. Besides, more and more energy and time are consumed by the data transmission out of transistor computing because of the speed mismatching between the computing and memory. To meet the energy efficiency demands of big data computing, the transistor should have a smaller feature size and store data faster to overcome the energy burden of computing and data transfer. Electron transport in two-dimensional (2D) materials is constrained within a 2D plane and different materials are assembled by the van der Waals force. Owning to the atomic thickness and dangling-bond-free surface, 2D materials have demonstrated advantages in transistor scaling-down and heterogeneous structure innovation. In this review, from the performance breakthrough of 2D transistors, we discuss the opportunities, progress and challenges of 2D materials in transistor applications.
format Online
Article
Text
id pubmed-10192534
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher Elsevier
record_format MEDLINE/PubMed
spelling pubmed-101925342023-05-19 2D materials readiness for the transistor performance breakthrough Zhang, Qing Liu, Chunsen Zhou, Peng iScience Review As the size of the transistor scales down, this strategy has confronted challenges because of the fundamental limits of silicon materials. Besides, more and more energy and time are consumed by the data transmission out of transistor computing because of the speed mismatching between the computing and memory. To meet the energy efficiency demands of big data computing, the transistor should have a smaller feature size and store data faster to overcome the energy burden of computing and data transfer. Electron transport in two-dimensional (2D) materials is constrained within a 2D plane and different materials are assembled by the van der Waals force. Owning to the atomic thickness and dangling-bond-free surface, 2D materials have demonstrated advantages in transistor scaling-down and heterogeneous structure innovation. In this review, from the performance breakthrough of 2D transistors, we discuss the opportunities, progress and challenges of 2D materials in transistor applications. Elsevier 2023-04-19 /pmc/articles/PMC10192534/ /pubmed/37216126 http://dx.doi.org/10.1016/j.isci.2023.106673 Text en © 2023 The Authors https://creativecommons.org/licenses/by/4.0/This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Zhang, Qing
Liu, Chunsen
Zhou, Peng
2D materials readiness for the transistor performance breakthrough
title 2D materials readiness for the transistor performance breakthrough
title_full 2D materials readiness for the transistor performance breakthrough
title_fullStr 2D materials readiness for the transistor performance breakthrough
title_full_unstemmed 2D materials readiness for the transistor performance breakthrough
title_short 2D materials readiness for the transistor performance breakthrough
title_sort 2d materials readiness for the transistor performance breakthrough
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10192534/
https://www.ncbi.nlm.nih.gov/pubmed/37216126
http://dx.doi.org/10.1016/j.isci.2023.106673
work_keys_str_mv AT zhangqing 2dmaterialsreadinessforthetransistorperformancebreakthrough
AT liuchunsen 2dmaterialsreadinessforthetransistorperformancebreakthrough
AT zhoupeng 2dmaterialsreadinessforthetransistorperformancebreakthrough