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Crystal growth and electronic properties of LaSbSe

The ZrSiS-type materials have gained intensive attentions. The magnetic version of the ZrSiS-type materials, LnSbTe (Ln = Lanthanide), offers great opportunities to explore new quantum states owing to the interplay between magnetism and electronic band topology. Here, we report the growth and charac...

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Detalles Bibliográficos
Autores principales: Pandey, Krishna, Sayler, Lauren, Basnet, Rabindra, Sakon, Josh, Wang, Fei, Hu, Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10195110/
https://www.ncbi.nlm.nih.gov/pubmed/37206882
http://dx.doi.org/10.3390/cryst12111663
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author Pandey, Krishna
Sayler, Lauren
Basnet, Rabindra
Sakon, Josh
Wang, Fei
Hu, Jin
author_facet Pandey, Krishna
Sayler, Lauren
Basnet, Rabindra
Sakon, Josh
Wang, Fei
Hu, Jin
author_sort Pandey, Krishna
collection PubMed
description The ZrSiS-type materials have gained intensive attentions. The magnetic version of the ZrSiS-type materials, LnSbTe (Ln = Lanthanide), offers great opportunities to explore new quantum states owing to the interplay between magnetism and electronic band topology. Here, we report the growth and characterization of the non-magnetic LaSbSe of this material family. We found the metallic transport, low magnetoresistance and non-compensated charge carriers with relatively low carrier density in LaSbSe. The specific heat measurement has revealed distinct Sommerfeld coefficient and Debye temperature in comparison to LaSbTe. Such addition of a new LnSbSe selenide compound could provide the alternative material choices in addition to LnSbTe telluride materials.
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spelling pubmed-101951102023-05-18 Crystal growth and electronic properties of LaSbSe Pandey, Krishna Sayler, Lauren Basnet, Rabindra Sakon, Josh Wang, Fei Hu, Jin Crystals (Basel) Article The ZrSiS-type materials have gained intensive attentions. The magnetic version of the ZrSiS-type materials, LnSbTe (Ln = Lanthanide), offers great opportunities to explore new quantum states owing to the interplay between magnetism and electronic band topology. Here, we report the growth and characterization of the non-magnetic LaSbSe of this material family. We found the metallic transport, low magnetoresistance and non-compensated charge carriers with relatively low carrier density in LaSbSe. The specific heat measurement has revealed distinct Sommerfeld coefficient and Debye temperature in comparison to LaSbTe. Such addition of a new LnSbSe selenide compound could provide the alternative material choices in addition to LnSbTe telluride materials. 2022-11 2022-11-18 /pmc/articles/PMC10195110/ /pubmed/37206882 http://dx.doi.org/10.3390/cryst12111663 Text en https://creativecommons.org/licenses/by/4.0/Submitted for possible open access publication under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Pandey, Krishna
Sayler, Lauren
Basnet, Rabindra
Sakon, Josh
Wang, Fei
Hu, Jin
Crystal growth and electronic properties of LaSbSe
title Crystal growth and electronic properties of LaSbSe
title_full Crystal growth and electronic properties of LaSbSe
title_fullStr Crystal growth and electronic properties of LaSbSe
title_full_unstemmed Crystal growth and electronic properties of LaSbSe
title_short Crystal growth and electronic properties of LaSbSe
title_sort crystal growth and electronic properties of lasbse
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10195110/
https://www.ncbi.nlm.nih.gov/pubmed/37206882
http://dx.doi.org/10.3390/cryst12111663
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AT wangfei crystalgrowthandelectronicpropertiesoflasbse
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