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Integration Technology of Micro-LED for Next-Generation Display
Inorganic micro light-emitting diodes (micro-LEDs) based on III-V compound semiconductors have been widely studied for self-emissive displays. From chips to applications, integration technology plays an indispensable role in micro-LED displays. For example, large-scale display relies on the integrat...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
AAAS
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10202190/ https://www.ncbi.nlm.nih.gov/pubmed/37223466 http://dx.doi.org/10.34133/research.0047 |
Sumario: | Inorganic micro light-emitting diodes (micro-LEDs) based on III-V compound semiconductors have been widely studied for self-emissive displays. From chips to applications, integration technology plays an indispensable role in micro-LED displays. For example, large-scale display relies on the integration of discrete device dies to achieve extended micro-LED array, and full color display requires integration of red, green, and blue micro-LED units on the same substrate. Moreover, the integration with transistors or complementary metal-oxide-semiconductor circuits are necessary to control and drive the micro-LED display system. In this review article, we summarized the 3 main integration technologies for micro-LED displays, which are called transfer integration, bonding integration, and growth integration. An overview of the characteristics of these 3 integration technologies is presented, while various strategies and challenges of integrated micro-LED display system are discussed. |
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