Bias and illumination-dependent room temperature negative differential conductance in Ni-doped ZnO/p-Si Schottky photodiodes for quantum optics applications

In this article, evidence for the existence of illumination and bias-dependent negative differential conductance (NDC) in Ni-doped Al/ZnO/p-Si Schottky diodes, and the possible mechanism for its origin, are presented. The atomic percentages of Ni doping were 0%, 3%, 5%, and 10%. NDC is observed betw...

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Autores principales: Ocaya, Richard O., Orman, Yusuf, Al-Sehemi, Abdullah G., Dere, Aysegul, Al-Ghamdi, Ahmed A., Yakuphanoğlu, Fahrettin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2023
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10208838/
https://www.ncbi.nlm.nih.gov/pubmed/37234616
http://dx.doi.org/10.1016/j.heliyon.2023.e16269
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author Ocaya, Richard O.
Orman, Yusuf
Al-Sehemi, Abdullah G.
Dere, Aysegul
Al-Ghamdi, Ahmed A.
Yakuphanoğlu, Fahrettin
author_facet Ocaya, Richard O.
Orman, Yusuf
Al-Sehemi, Abdullah G.
Dere, Aysegul
Al-Ghamdi, Ahmed A.
Yakuphanoğlu, Fahrettin
author_sort Ocaya, Richard O.
collection PubMed
description In this article, evidence for the existence of illumination and bias-dependent negative differential conductance (NDC) in Ni-doped Al/ZnO/p-Si Schottky diodes, and the possible mechanism for its origin, are presented. The atomic percentages of Ni doping were 0%, 3%, 5%, and 10%. NDC is observed between -1.5 V to -0.5 V in reverse bias under illumination, but only at certain doping levels and specific forward bias. Furthermore, the devices show excellent optoelectronic characteristics in the photoconductive and photovoltaic modes, with device open circuit voltages ranging from 0.03 V to 0.6 V under illumination.
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spelling pubmed-102088382023-05-25 Bias and illumination-dependent room temperature negative differential conductance in Ni-doped ZnO/p-Si Schottky photodiodes for quantum optics applications Ocaya, Richard O. Orman, Yusuf Al-Sehemi, Abdullah G. Dere, Aysegul Al-Ghamdi, Ahmed A. Yakuphanoğlu, Fahrettin Heliyon Research Article In this article, evidence for the existence of illumination and bias-dependent negative differential conductance (NDC) in Ni-doped Al/ZnO/p-Si Schottky diodes, and the possible mechanism for its origin, are presented. The atomic percentages of Ni doping were 0%, 3%, 5%, and 10%. NDC is observed between -1.5 V to -0.5 V in reverse bias under illumination, but only at certain doping levels and specific forward bias. Furthermore, the devices show excellent optoelectronic characteristics in the photoconductive and photovoltaic modes, with device open circuit voltages ranging from 0.03 V to 0.6 V under illumination. Elsevier 2023-05-18 /pmc/articles/PMC10208838/ /pubmed/37234616 http://dx.doi.org/10.1016/j.heliyon.2023.e16269 Text en © 2023 The Author(s) https://creativecommons.org/licenses/by-nc-nd/4.0/This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Research Article
Ocaya, Richard O.
Orman, Yusuf
Al-Sehemi, Abdullah G.
Dere, Aysegul
Al-Ghamdi, Ahmed A.
Yakuphanoğlu, Fahrettin
Bias and illumination-dependent room temperature negative differential conductance in Ni-doped ZnO/p-Si Schottky photodiodes for quantum optics applications
title Bias and illumination-dependent room temperature negative differential conductance in Ni-doped ZnO/p-Si Schottky photodiodes for quantum optics applications
title_full Bias and illumination-dependent room temperature negative differential conductance in Ni-doped ZnO/p-Si Schottky photodiodes for quantum optics applications
title_fullStr Bias and illumination-dependent room temperature negative differential conductance in Ni-doped ZnO/p-Si Schottky photodiodes for quantum optics applications
title_full_unstemmed Bias and illumination-dependent room temperature negative differential conductance in Ni-doped ZnO/p-Si Schottky photodiodes for quantum optics applications
title_short Bias and illumination-dependent room temperature negative differential conductance in Ni-doped ZnO/p-Si Schottky photodiodes for quantum optics applications
title_sort bias and illumination-dependent room temperature negative differential conductance in ni-doped zno/p-si schottky photodiodes for quantum optics applications
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10208838/
https://www.ncbi.nlm.nih.gov/pubmed/37234616
http://dx.doi.org/10.1016/j.heliyon.2023.e16269
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