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Metavalent Bonding in Layered Phase‐Change Memory Materials (Adv. Sci. 15/2023)

Metavalent Bonding In article number 2300901, Wei Zhang, Matthias Wuttig, and co‐workers elucidate how metavalent bonding (MVB) develops across the so called van der Waals (vdW)‐like gaps in layered Sb2Te3 and Ge–Sb–Te alloys. By tailoring the degree of MVB across the gaps via uniaxial strain, a lar...

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Autores principales: Zhang, Wei, Zhang, Hangming, Sun, Suyang, Wang, Xiaozhe, Lu, Zhewen, Wang, Xudong, Wang, Jiang‐Jing, Jia, Chunlin, Schön, Carl‐Friedrich, Mazzarello, Riccardo, Ma, En, Wuttig, Matthias
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214227/
http://dx.doi.org/10.1002/advs.202370094
_version_ 1785047794043584512
author Zhang, Wei
Zhang, Hangming
Sun, Suyang
Wang, Xiaozhe
Lu, Zhewen
Wang, Xudong
Wang, Jiang‐Jing
Jia, Chunlin
Schön, Carl‐Friedrich
Mazzarello, Riccardo
Ma, En
Wuttig, Matthias
author_facet Zhang, Wei
Zhang, Hangming
Sun, Suyang
Wang, Xiaozhe
Lu, Zhewen
Wang, Xudong
Wang, Jiang‐Jing
Jia, Chunlin
Schön, Carl‐Friedrich
Mazzarello, Riccardo
Ma, En
Wuttig, Matthias
author_sort Zhang, Wei
collection PubMed
description Metavalent Bonding In article number 2300901, Wei Zhang, Matthias Wuttig, and co‐workers elucidate how metavalent bonding (MVB) develops across the so called van der Waals (vdW)‐like gaps in layered Sb2Te3 and Ge–Sb–Te alloys. By tailoring the degree of MVB across the gaps via uniaxial strain, a large variation of optical reflectivity can be obtained, enabling potential photonic applications. [Image: see text]
format Online
Article
Text
id pubmed-10214227
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher John Wiley and Sons Inc.
record_format MEDLINE/PubMed
spelling pubmed-102142272023-05-27 Metavalent Bonding in Layered Phase‐Change Memory Materials (Adv. Sci. 15/2023) Zhang, Wei Zhang, Hangming Sun, Suyang Wang, Xiaozhe Lu, Zhewen Wang, Xudong Wang, Jiang‐Jing Jia, Chunlin Schön, Carl‐Friedrich Mazzarello, Riccardo Ma, En Wuttig, Matthias Adv Sci (Weinh) Inside Back Cover Metavalent Bonding In article number 2300901, Wei Zhang, Matthias Wuttig, and co‐workers elucidate how metavalent bonding (MVB) develops across the so called van der Waals (vdW)‐like gaps in layered Sb2Te3 and Ge–Sb–Te alloys. By tailoring the degree of MVB across the gaps via uniaxial strain, a large variation of optical reflectivity can be obtained, enabling potential photonic applications. [Image: see text] John Wiley and Sons Inc. 2023-05-26 /pmc/articles/PMC10214227/ http://dx.doi.org/10.1002/advs.202370094 Text en © 2023 Wiley‐VCH GmbH https://creativecommons.org/licenses/by-nc/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc/4.0/ (https://creativecommons.org/licenses/by-nc/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.
spellingShingle Inside Back Cover
Zhang, Wei
Zhang, Hangming
Sun, Suyang
Wang, Xiaozhe
Lu, Zhewen
Wang, Xudong
Wang, Jiang‐Jing
Jia, Chunlin
Schön, Carl‐Friedrich
Mazzarello, Riccardo
Ma, En
Wuttig, Matthias
Metavalent Bonding in Layered Phase‐Change Memory Materials (Adv. Sci. 15/2023)
title Metavalent Bonding in Layered Phase‐Change Memory Materials (Adv. Sci. 15/2023)
title_full Metavalent Bonding in Layered Phase‐Change Memory Materials (Adv. Sci. 15/2023)
title_fullStr Metavalent Bonding in Layered Phase‐Change Memory Materials (Adv. Sci. 15/2023)
title_full_unstemmed Metavalent Bonding in Layered Phase‐Change Memory Materials (Adv. Sci. 15/2023)
title_short Metavalent Bonding in Layered Phase‐Change Memory Materials (Adv. Sci. 15/2023)
title_sort metavalent bonding in layered phase‐change memory materials (adv. sci. 15/2023)
topic Inside Back Cover
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214227/
http://dx.doi.org/10.1002/advs.202370094
work_keys_str_mv AT zhangwei metavalentbondinginlayeredphasechangememorymaterialsadvsci152023
AT zhanghangming metavalentbondinginlayeredphasechangememorymaterialsadvsci152023
AT sunsuyang metavalentbondinginlayeredphasechangememorymaterialsadvsci152023
AT wangxiaozhe metavalentbondinginlayeredphasechangememorymaterialsadvsci152023
AT luzhewen metavalentbondinginlayeredphasechangememorymaterialsadvsci152023
AT wangxudong metavalentbondinginlayeredphasechangememorymaterialsadvsci152023
AT wangjiangjing metavalentbondinginlayeredphasechangememorymaterialsadvsci152023
AT jiachunlin metavalentbondinginlayeredphasechangememorymaterialsadvsci152023
AT schoncarlfriedrich metavalentbondinginlayeredphasechangememorymaterialsadvsci152023
AT mazzarelloriccardo metavalentbondinginlayeredphasechangememorymaterialsadvsci152023
AT maen metavalentbondinginlayeredphasechangememorymaterialsadvsci152023
AT wuttigmatthias metavalentbondinginlayeredphasechangememorymaterialsadvsci152023