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Structural and optical analyses for InGaN-based red micro-LED

This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombin...

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Detalles Bibliográficos
Autores principales: Hsiao, Fu-He, Miao, Wen-Chien, Hong, Yu-Heng, Chiang, Hsin, Ho, I-Hung, Liang, Kai-Bo, Iida, Daisuke, Lin, Chun-Liang, Ahn, Hyeyoung, Ohkawa, Kazuhiro, Chang, Chiao-Yun, Kuo, Hao-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214918/
https://www.ncbi.nlm.nih.gov/pubmed/37382747
http://dx.doi.org/10.1186/s11671-023-03853-1
Descripción
Sumario:This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.