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Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective
The single-event effect reliability issue is one of the most critical concerns in the context of space applications for SiC VDMOS. In this paper, the SEE characteristics and mechanisms of the proposed deep trench gate superjunction (DTSJ), conventional trench gate superjunction (CTSJ), conventional...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10220789/ https://www.ncbi.nlm.nih.gov/pubmed/37241697 http://dx.doi.org/10.3390/mi14051074 |
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author | Liu, Tao Wang, Yuan Ma, Rongyao Wu, Hao Tao, Jingyu Yu, Yiren Cheng, Zijun Hu, Shengdong |
author_facet | Liu, Tao Wang, Yuan Ma, Rongyao Wu, Hao Tao, Jingyu Yu, Yiren Cheng, Zijun Hu, Shengdong |
author_sort | Liu, Tao |
collection | PubMed |
description | The single-event effect reliability issue is one of the most critical concerns in the context of space applications for SiC VDMOS. In this paper, the SEE characteristics and mechanisms of the proposed deep trench gate superjunction (DTSJ), conventional trench gate superjunction (CTSJ), conventional trench gate (CT), and conventional planar gate (CT) SiC VDMOS are comprehensively analyzed and simulated. Extensive simulations demonstrate the maximum SET current peaks of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS, which are 188 mA, 218 mA, 242 mA, and 255 mA, with a bias voltage V(DS) of 300 V and LET = 120 MeV·cm(2)/mg, respectively. The total charges of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS collected at the drain are 320 pC, 1100 pC, 885 pC, and 567 pC, respectively. A definition and calculation of the charge enhancement factor (CEF) are proposed. The CEF values of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS are 43, 160, 117, and 55, respectively. Compared with CTSJ−, CT−, and CP SiC VDMOS, the total charge and CEF of the DTSJ SiC VDMOS are reduced by 70.9%, 62.4%, 43.6% and 73.1%, 63.2%, and 21.8%, respectively. The maximum SET lattice temperature of the DTSJ SiC VDMOS is less than 2823 K under the wide operating conditions of a drain bias voltage V(DS) ranging from 100 V to 1100 V and a LET value ranging from 1 MeV·cm(2)/mg to 120 MeV·cm(2)/mg, while the maximum SET lattice temperatures of the other three SiC VDMOS significantly exceed 3100 K. The SEGR LET thresholds of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS are approximately 100 MeV·cm(2)/mg, 15 MeV·cm(2)/mg, 15 MeV·cm(2)/mg, and 60 MeV·cm(2)/mg, respectively, while the value of V(DS) = 1100 V. |
format | Online Article Text |
id | pubmed-10220789 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-102207892023-05-28 Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective Liu, Tao Wang, Yuan Ma, Rongyao Wu, Hao Tao, Jingyu Yu, Yiren Cheng, Zijun Hu, Shengdong Micromachines (Basel) Article The single-event effect reliability issue is one of the most critical concerns in the context of space applications for SiC VDMOS. In this paper, the SEE characteristics and mechanisms of the proposed deep trench gate superjunction (DTSJ), conventional trench gate superjunction (CTSJ), conventional trench gate (CT), and conventional planar gate (CT) SiC VDMOS are comprehensively analyzed and simulated. Extensive simulations demonstrate the maximum SET current peaks of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS, which are 188 mA, 218 mA, 242 mA, and 255 mA, with a bias voltage V(DS) of 300 V and LET = 120 MeV·cm(2)/mg, respectively. The total charges of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS collected at the drain are 320 pC, 1100 pC, 885 pC, and 567 pC, respectively. A definition and calculation of the charge enhancement factor (CEF) are proposed. The CEF values of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS are 43, 160, 117, and 55, respectively. Compared with CTSJ−, CT−, and CP SiC VDMOS, the total charge and CEF of the DTSJ SiC VDMOS are reduced by 70.9%, 62.4%, 43.6% and 73.1%, 63.2%, and 21.8%, respectively. The maximum SET lattice temperature of the DTSJ SiC VDMOS is less than 2823 K under the wide operating conditions of a drain bias voltage V(DS) ranging from 100 V to 1100 V and a LET value ranging from 1 MeV·cm(2)/mg to 120 MeV·cm(2)/mg, while the maximum SET lattice temperatures of the other three SiC VDMOS significantly exceed 3100 K. The SEGR LET thresholds of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS are approximately 100 MeV·cm(2)/mg, 15 MeV·cm(2)/mg, 15 MeV·cm(2)/mg, and 60 MeV·cm(2)/mg, respectively, while the value of V(DS) = 1100 V. MDPI 2023-05-18 /pmc/articles/PMC10220789/ /pubmed/37241697 http://dx.doi.org/10.3390/mi14051074 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Liu, Tao Wang, Yuan Ma, Rongyao Wu, Hao Tao, Jingyu Yu, Yiren Cheng, Zijun Hu, Shengdong Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective |
title | Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective |
title_full | Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective |
title_fullStr | Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective |
title_full_unstemmed | Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective |
title_short | Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective |
title_sort | simulation studies on single-event effects and the mechanisms of sic vdmos from a structural perspective |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10220789/ https://www.ncbi.nlm.nih.gov/pubmed/37241697 http://dx.doi.org/10.3390/mi14051074 |
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