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Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective
The single-event effect reliability issue is one of the most critical concerns in the context of space applications for SiC VDMOS. In this paper, the SEE characteristics and mechanisms of the proposed deep trench gate superjunction (DTSJ), conventional trench gate superjunction (CTSJ), conventional...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10220789/ https://www.ncbi.nlm.nih.gov/pubmed/37241697 http://dx.doi.org/10.3390/mi14051074 |