Cargando…

Recent Advances on GaN-Based Micro-LEDs

GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and distinctive advantages for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced current expansion, fewer self-heating effects, and h...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zhang, Youwei, Xu, Ruiqiang, Kang, Qiushi, Zhang, Xiaoli, Zhang, Zi-hui
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Review
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10220879/ https://www.ncbi.nlm.nih.gov/pubmed/37241615 http://dx.doi.org/10.3390/mi14050991

Ejemplares similares

Research Progress of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
por: Xu, Ruiqiang, et al.
Publicado: (2023)

Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs
por: Zhang, Ke, et al.
Publicado: (2020)

Optimization of Ternary In(x)Ga(1-x)N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs
por: Lin, Yu-Chung, et al.
Publicado: (2023)

Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation
por: Zhu, Zhifang, et al.
Publicado: (2022)

Graphene as a Transparent Conductive Electrode in GaN-Based LEDs
por: Zhang, Hehe, et al.
Publicado: (2022)

Precise Temperature Mapping of GaN-Based LEDs by Quantitative Infrared Micro-Thermography
por: Chang, Ki Soo, et al.
Publicado: (2012)

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
por: Jiao, Qianqian, et al.
Publicado: (2016)

Power-Dependent Optical Characterization of the InGaN/GaN-Based Micro-Light-Emitting-Diode (LED) in High Spatial Resolution
por: Yang, Haifeng, et al.
Publicado: (2023)

Progress and Challenges of InGaN/GaN-Based Core–Shell Microrod LEDs
por: Meier, Johanna, et al.
Publicado: (2022)

Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: Augmented light output of GaN UV-LED
por: Jeong, Hyun, et al.
Publicado: (2015)

GaN-based mini-LED matrix applied to multi-functional forward lighting
por: Nguyen, Quang-Khoi, et al.
Publicado: (2022)

Improvement of photon extraction efficiency of GaN-based LED using micro and nano complex polymer structures
por: Cho, Joong-Yeon, et al.
Publicado: (2011)

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
por: Zhao, Ying, et al.
Publicado: (2020)

Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light
por: Chiang, Yen Chih, et al.
Publicado: (2015)

Review of Recent Progress on Vertical GaN-Based PN Diodes
por: Pu, Taofei, et al.
Publicado: (2021)

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array
por: Zhan, Jinglin, et al.
Publicado: (2022)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)

Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD
por: Zhang, Jin, et al.
Publicado: (2014)

Comparative Analysis of Optoelectrical Performance in Laser Lift-Off Process for GaN-Based Green Micro-LED Arrays
por: Liu, Chuanbiao, et al.
Publicado: (2023)

An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits
por: Liu, Mengling, et al.
Publicado: (2018)

Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography
por: Wang, Sheng-Wen, et al.
Publicado: (2017)

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate
por: Wu, Peng, et al.
Publicado: (2022)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
por: Ma, Maodan, et al.
Publicado: (2022)

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
por: Hu, Xiao-Long, et al.
Publicado: (2015)

Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths
por: Li, Changfu, et al.
Publicado: (2017)

Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor
por: Fu, Yafei, et al.
Publicado: (2019)

The Role of GaN in the Heterostructure WS(2)/GaN for SERS Applications
por: Ko, Tsung-Shine, et al.
Publicado: (2023)

Nanoscale Characterization of V-Defect in InGaN/GaN QWs LEDs Using Near-Field Scanning Optical Microscopy
por: Li, Yufeng, et al.
Publicado: (2019)

Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization
por: Bezshlyakh, Daria D., et al.
Publicado: (2020)

High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots
por: Huang, Yu-Ming, et al.
Publicado: (2021)

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
por: Shih, Huan-Yu, et al.
Publicado: (2015)

Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD
por: Xu, Peiqiang, et al.
Publicado: (2012)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
por: Wang, Haiping, et al.
Publicado: (2022)

Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD
por: Sun, Xiaojuan, et al.
Publicado: (2012)

High Modulation Bandwidth of Semipolar (11–22) InGaN/GaN LEDs with Long Wavelength Emission
por: Haggar, Jack IH., et al.
Publicado: (2020)

Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs
por: Ito, Kazuma, et al.
Publicado: (2021)

High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application
por: Zhang, Penghao, et al.
Publicado: (2022)

High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability
por: Yang, Weihuang, et al.
Publicado: (2014)

Light Extraction Analysis of AlGaInP Based Red and GaN Based Blue/Green Flip-Chip Micro-LEDs Using the Monte Carlo Ray Tracing Method
por: Lan, Shuyu, et al.
Publicado: (2019)

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
por: Arteev, Dmitri S., et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_ghr5hmoe3b2j6o9odf8jhp6pvg