Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System

Multi-gate field effect transistors (FETs) such as FinFETs are severely affected by short-channel effects (SCEs) below 14 nm technology nodes, with even taller fins incurring fringing capacitances. This leads to performance degradation of the devices, which inhibits further scaling of nanoFETs, dete...

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Detalles Bibliográficos
Autores principales: Nanda, Swagat, Dhar, Rudra Sankar, Awwad, Falah, Hussein, Mousa I.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221103/
https://www.ncbi.nlm.nih.gov/pubmed/37242078
http://dx.doi.org/10.3390/nano13101662

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221103/
https://www.ncbi.nlm.nih.gov/pubmed/37242078
http://dx.doi.org/10.3390/nano13101662

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