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Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System
Multi-gate field effect transistors (FETs) such as FinFETs are severely affected by short-channel effects (SCEs) below 14 nm technology nodes, with even taller fins incurring fringing capacitances. This leads to performance degradation of the devices, which inhibits further scaling of nanoFETs, dete...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221103/ https://www.ncbi.nlm.nih.gov/pubmed/37242078 http://dx.doi.org/10.3390/nano13101662 |