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TiS(3) Nanoribbons: A Novel Material for Ultra-Sensitive Photodetection across Extreme Temperature Ranges

Photodetectors that can operate over a wide range of temperatures, from cryogenic to elevated temperatures, are crucial for a variety of modern scientific fields, including aerospace, high-energy science, and astro-particle science. In this study, we investigate the temperature-dependent photodetect...

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Detalles Bibliográficos
Autores principales: Talib, Mohammad, Tripathi, Nishant, Manzoor, Samrah, Sharma, Prachi, Pavelyev, Vladimir, Volkov, Valentyn S., Arsenin, Aleksey V., Novikov, Sergey M., Mishra, Prabhash
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221207/
https://www.ncbi.nlm.nih.gov/pubmed/37430866
http://dx.doi.org/10.3390/s23104948
Descripción
Sumario:Photodetectors that can operate over a wide range of temperatures, from cryogenic to elevated temperatures, are crucial for a variety of modern scientific fields, including aerospace, high-energy science, and astro-particle science. In this study, we investigate the temperature-dependent photodetection properties of titanium trisulfide (TiS(3))- in order to develop high-performance photodetectors that can operate across a wide range of temperatures (77 K–543 K). We fabricate a solid-state photodetector using the dielectrophoresis technique, which demonstrates a quick response (response/recovery time ~0.093 s) and high performance over a wide range of temperatures. Specifically, the photodetector exhibits a very high photocurrent (6.95 × 10(−5) A), photoresponsivity (1.624 × 10(8) A/W), quantum efficiency (3.3 × 10(8) A/W·nm), and detectivity (4.328 × 10(15) Jones) for a 617 nm wavelength of light with a very weak intensity (~1.0 × 10(−5) W/cm(2)). The developed photodetector also shows a very high device ON/OFF ratio (~32). Prior to fabrication, the TiS(3) nanoribbons were synthesized using the chemical vapor technique and characterized according to their morphology, structure, stability, and electronic and optoelectronic properties; this was performed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray diffraction (XRD), thermogravimetric analysis (TGA), and a UV–Visible–NIR spectrophotometer. We anticipate that this novel solid-state photodetector will have broad applications in modern optoelectronic devices.