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Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy
In this paper, we used micro-Raman spectroscopy in cross-section to investigate the effect of different doping on the distribution of stress in the silicon substrate and the grown 3C-SiC film. The 3C-SiC films with a thickness up to 10 μm were grown on Si (100) substrates in a horizontal hot-wall ch...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221332/ https://www.ncbi.nlm.nih.gov/pubmed/37241451 http://dx.doi.org/10.3390/ma16103824 |