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Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs

Power MOSFETs are found to be very vulnerable to single-event burnout (SEB) in space irradiation environments, and the military components generally require that devices could operate reliably as the temperature varies from 218 K to 423 K (−55 °C to 150 °C); thus, the temperature dependence of singl...

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Autores principales: Wang, Chen, Liu, Yi, Xu, Changqing, Liao, Xinfang, Chen, Dongdong, Wu, Zhenyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221558/
https://www.ncbi.nlm.nih.gov/pubmed/37241651
http://dx.doi.org/10.3390/mi14051028
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author Wang, Chen
Liu, Yi
Xu, Changqing
Liao, Xinfang
Chen, Dongdong
Wu, Zhenyu
author_facet Wang, Chen
Liu, Yi
Xu, Changqing
Liao, Xinfang
Chen, Dongdong
Wu, Zhenyu
author_sort Wang, Chen
collection PubMed
description Power MOSFETs are found to be very vulnerable to single-event burnout (SEB) in space irradiation environments, and the military components generally require that devices could operate reliably as the temperature varies from 218 K to 423 K (−55 °C to 150 °C); thus, the temperature dependence of single-event burnout (SEB) in power MOSFETs should be investigated. Our simulation results showed that the Si power MOSFETs are more tolerant to SEB at a higher temperature at the lower LET (10 MeV∙cm(2)/mg) due to the decrease of the impact ionization rate, which is in good agreement with the previous research. However, the state of the parasitic BJT plays a primary role in the SEB failure mechanism when the LET value is greater than 40 MeV∙cm(2)/mg, which exhibits a completely different temperature dependence from that of 10 MeV∙cm(2)/mg. Results indicate that with the temperature increasing, the lower difficulty to turn on the parasitic BJT and the increasing current gain all make it easier to build up the regenerative feedback process responsible for SEB failure. As a result, the SEB susceptibility of power MOSFETs increases as ambient temperature increases when the LET value is greater than 40 MeV∙cm(2)/mg.
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spelling pubmed-102215582023-05-28 Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs Wang, Chen Liu, Yi Xu, Changqing Liao, Xinfang Chen, Dongdong Wu, Zhenyu Micromachines (Basel) Article Power MOSFETs are found to be very vulnerable to single-event burnout (SEB) in space irradiation environments, and the military components generally require that devices could operate reliably as the temperature varies from 218 K to 423 K (−55 °C to 150 °C); thus, the temperature dependence of single-event burnout (SEB) in power MOSFETs should be investigated. Our simulation results showed that the Si power MOSFETs are more tolerant to SEB at a higher temperature at the lower LET (10 MeV∙cm(2)/mg) due to the decrease of the impact ionization rate, which is in good agreement with the previous research. However, the state of the parasitic BJT plays a primary role in the SEB failure mechanism when the LET value is greater than 40 MeV∙cm(2)/mg, which exhibits a completely different temperature dependence from that of 10 MeV∙cm(2)/mg. Results indicate that with the temperature increasing, the lower difficulty to turn on the parasitic BJT and the increasing current gain all make it easier to build up the regenerative feedback process responsible for SEB failure. As a result, the SEB susceptibility of power MOSFETs increases as ambient temperature increases when the LET value is greater than 40 MeV∙cm(2)/mg. MDPI 2023-05-11 /pmc/articles/PMC10221558/ /pubmed/37241651 http://dx.doi.org/10.3390/mi14051028 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wang, Chen
Liu, Yi
Xu, Changqing
Liao, Xinfang
Chen, Dongdong
Wu, Zhenyu
Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs
title Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs
title_full Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs
title_fullStr Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs
title_full_unstemmed Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs
title_short Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs
title_sort research on temperature dependence of single-event burnout in power mosfets
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221558/
https://www.ncbi.nlm.nih.gov/pubmed/37241651
http://dx.doi.org/10.3390/mi14051028
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