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Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs
Power MOSFETs are found to be very vulnerable to single-event burnout (SEB) in space irradiation environments, and the military components generally require that devices could operate reliably as the temperature varies from 218 K to 423 K (−55 °C to 150 °C); thus, the temperature dependence of singl...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221558/ https://www.ncbi.nlm.nih.gov/pubmed/37241651 http://dx.doi.org/10.3390/mi14051028 |