Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects

We comprehensively investigate displacement-defect-induced current and static noise margin variations in six-transistor (6T) static random access memory (SRAM) based on a 10 nm node fin field-effect transistor (FinFET) using technology computer-aided design (TCAD). Various defect cluster conditions...

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Detalles Bibliográficos
Autores principales: Bang, Minji, Ha, Jonghyeon, Lee, Gyeongyeop, Suh, Minki, Kim, Jungsik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221633/
https://www.ncbi.nlm.nih.gov/pubmed/37241715
http://dx.doi.org/10.3390/mi14051090

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221633/
https://www.ncbi.nlm.nih.gov/pubmed/37241715
http://dx.doi.org/10.3390/mi14051090

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