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Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects

We comprehensively investigate displacement-defect-induced current and static noise margin variations in six-transistor (6T) static random access memory (SRAM) based on a 10 nm node fin field-effect transistor (FinFET) using technology computer-aided design (TCAD). Various defect cluster conditions...

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Detalles Bibliográficos
Autores principales:	Bang, Minji, Ha, Jonghyeon, Lee, Gyeongyeop, Suh, Minki, Kim, Jungsik
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221633/ https://www.ncbi.nlm.nih.gov/pubmed/37241715 http://dx.doi.org/10.3390/mi14051090

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