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A High-Sensitivity MEMS Accelerometer Using a Sc(0.8)Al(0.2)N-Based Four Beam Structure

In this paper, a high-sensitivity microelectromechanical system (MEMS) piezoelectric accelerometer based on a Scandium-doped Aluminum Nitride (ScAlN) thin film is proposed. The primary structure of this accelerometer is a silicon proof mass fixed by four piezoelectric cantilever beams. In order to e...

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Detalles Bibliográficos
Autores principales:	Zhang, Zhenghu, Zhang, Linwei, Wu, Zhipeng, Gao, Yunfei, Lou, Liang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Communication
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221866/ https://www.ncbi.nlm.nih.gov/pubmed/37241691 http://dx.doi.org/10.3390/mi14051069

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